S-1000C38-N4T1U

Basic Information Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor Amplifier
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 100 mA
• Maximum Collector-Emitter Voltage (Vce): 50 V
• Maximum Power Dissipation (Pd): 350 mW
• DC Current Gain (hfe): 100 - 400
• Transition Frequency (ft): 150 MHz
• Noise Figure (NF): 2 dB
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The S-1000C38-N4T1U transistor has a total of three pins:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): The input signal is applied to this pin for amplification.
3. Emitter (E): This pin is connected to the ground or negative terminal of the power supply.

Functional Features

• High gain: The S-1000C38-N4T1U offers a high DC current gain (hfe) ranging from 100 to 400, making it suitable for applications requiring significant signal amplification.
• Low noise: With a noise figure (NF) of only 2 dB, this transistor minimizes unwanted noise during signal amplification.
• Wide operating temperature range: The S-1000C38-N4T1U can operate reliably in extreme temperature conditions, ranging from -55°C to +150°C.
• Fast transition frequency: The transistor's transition frequency (ft) of 150 MHz allows for efficient amplification of high-frequency signals.

Advantages and Disadvantages

Advantages: - High gain ensures effective signal amplification. - Low noise figure minimizes unwanted noise in the amplified signal. - Wide operating temperature range enables usage in various environments. - Fast transition frequency allows for amplification of high-frequency signals.

Disadvantages: - Limited maximum collector current (Ic) of 100 mA may restrict certain high-power applications. - Maximum collector-emitter voltage (Vce) of 50 V limits its use in high-voltage circuits.

Working Principles

The S-1000C38-N4T1U operates based on the principles of bipolar junction transistors. When a small input current is applied to the base pin, it controls the larger output current flowing between the collector and emitter pins. This amplification process allows the transistor to increase the strength of weak signals.

Detailed Application Field Plans

The S-1000C38-N4T1U transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio amplifiers to enhance the volume and quality of sound signals.
2. Radio Frequency (RF) Communication: The transistor's fast transition frequency makes it suitable for RF amplification in wireless communication systems.
3. Sensor Interface Circuits: It can be utilized in sensor interface circuits to amplify weak sensor signals for further processing.
4. Medical Electronics: The low noise figure of the transistor makes it ideal for medical devices that require accurate signal amplification.

Detailed and Complete Alternative Models

1. S-1000C38-N4T1R: Similar to S-1000C38-N4T1U but with a different package type (Through-Hole).
2. S-1000C38-N4T2U: Similar to S-1000C38-N4T1U but with a higher maximum collector current (150 mA).
3. S-1000C38-N4T3U: Similar to S-1000C38-N4T1U but with a lower noise figure (1 dB).

These alternative models provide options based on specific requirements and preferences.

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