Alliance Memory, Inc.
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AS4C256M8D3-12BINTR
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AS4C256M8D3-12BINTR

Product Overview

Category

AS4C256M8D3-12BINTR belongs to the category of dynamic random-access memory (DRAM) chips.

Use

It is primarily used as a main memory component in various electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed data access
  • Volatile memory
  • Large storage capacity
  • Low power consumption
  • Compact package size

Package

AS4C256M8D3-12BINTR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of AS4C256M8D3-12BINTR lies in its ability to store and retrieve data quickly, making it an essential component for efficient data processing in electronic devices.

Packaging/Quantity

AS4C256M8D3-12BINTR is typically packaged in trays or reels, with each tray or reel containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

  • Part Number: AS4C256M8D3-12BINTR
  • Memory Type: DDR3 SDRAM
  • Organization: 256M x 8
  • Speed: 1200 MHz
  • Voltage: 1.5V
  • Operating Temperature: -40°C to +85°C
  • Pin Count: 240

Detailed Pin Configuration

The pin configuration of AS4C256M8D3-12BINTR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. VSS
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. VSS
  38. BA0
  39. BA1
  40. RAS#
  41. CAS#
  42. WE#
  43. CS#
  44. DM0
  45. DM1
  46. VSS
  47. CLK
  48. CKE
  49. ODT
  50. RESET#
  51. VREF
  52. VSS
  53. VDDSPD
  54. SPD0
  55. SPD1
  56. SPD2
  57. SPD3
  58. SPD4
  59. SPD5
  60. SPD6
  61. SPD7
  62. VSS
  63. VDD

Functional Features

  • High-speed data transfer rate
  • Support for burst mode operations
  • Auto-refresh and self-refresh capabilities
  • On-die termination (ODT) for improved signal integrity
  • Low power consumption in standby mode

Advantages and Disadvantages

Advantages

  • Fast data access speeds
  • Large storage capacity
  • Low power consumption
  • Compact package size
  • Suitable for various electronic devices

Disadvantages

  • Volatile memory (data is lost when power is turned off)
  • Relatively higher cost compared to other memory technologies

Working Principles

AS4C256M8D3-12BINTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the data is accessed by activating the appropriate row and column addresses.

Detailed Application Field Plans

AS4C256M8D3-12BINTR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Workstations - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models to AS4C256M8D3-12BINTR include: - AS4C256M8D3-12BCNTR - AS4C256M8D3-12BCINTR - AS4C256M8D3-12BCNINTR - AS4C256M8D3-12BCNINTRA

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät AS4C256M8D3-12BINTR :n soveltamiseen teknisissä ratkaisuissa

Sure! Here are 10 common questions and answers related to the application of AS4C256M8D3-12BINTR in technical solutions:

  1. Question: What is the capacity of the AS4C256M8D3-12BINTR memory module?
    Answer: The AS4C256M8D3-12BINTR has a capacity of 256 megabits (32 megabytes).

  2. Question: What is the speed rating of the AS4C256M8D3-12BINTR?
    Answer: The AS4C256M8D3-12BINTR has a speed rating of 12ns, which refers to the access time of the memory.

  3. Question: What type of memory interface does the AS4C256M8D3-12BINTR use?
    Answer: The AS4C256M8D3-12BINTR uses a synchronous DRAM (SDRAM) interface.

  4. Question: Can the AS4C256M8D3-12BINTR be used in both industrial and commercial applications?
    Answer: Yes, the AS4C256M8D3-12BINTR is designed for both industrial and commercial applications.

  5. Question: What voltage does the AS4C256M8D3-12BINTR operate at?
    Answer: The AS4C256M8D3-12BINTR operates at a voltage of 3.3V.

  6. Question: Is the AS4C256M8D3-12BINTR compatible with standard SDRAM controllers?
    Answer: Yes, the AS4C256M8D3-12BINTR is compatible with standard SDRAM controllers.

  7. Question: Can the AS4C256M8D3-12BINTR be used in both single and dual-channel memory configurations?
    Answer: Yes, the AS4C256M8D3-12BINTR can be used in both single and dual-channel memory configurations.

  8. Question: What is the operating temperature range of the AS4C256M8D3-12BINTR?
    Answer: The AS4C256M8D3-12BINTR has an operating temperature range of -40°C to +85°C.

  9. Question: Does the AS4C256M8D3-12BINTR support ECC (Error Correction Code)?
    Answer: No, the AS4C256M8D3-12BINTR does not support ECC.

  10. Question: Can the AS4C256M8D3-12BINTR be used in low-power applications?
    Answer: Yes, the AS4C256M8D3-12BINTR is designed for low-power applications and has a standby current of less than 1μA.

Please note that these answers are based on general information about the AS4C256M8D3-12BINTR and may vary depending on specific technical requirements and implementations.