Alliance Memory, Inc.
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AS4C8M16S-6BINTR
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AS4C8M16S-6BINTR

Product Overview

Category

AS4C8M16S-6BINTR belongs to the category of semiconductor memory products.

Use

It is primarily used as a random access memory (RAM) module in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

  • High-speed operation: AS4C8M16S-6BINTR offers fast data access and retrieval, making it suitable for applications that require quick processing.
  • Large storage capacity: With a capacity of 8 megabits (8M), this memory module can store a significant amount of data.
  • Low power consumption: AS4C8M16S-6BINTR is designed to operate efficiently with minimal power consumption.
  • Reliable performance: It provides stable and reliable performance, ensuring data integrity and system stability.

Package

AS4C8M16S-6BINTR is available in a compact and standardized package, commonly known as a dual in-line memory module (DIMM). This package allows for easy installation and compatibility with various devices.

Essence

The essence of AS4C8M16S-6BINTR lies in its ability to provide high-speed and reliable data storage and retrieval, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

AS4C8M16S-6BINTR is typically packaged individually or in sets, depending on the manufacturer's specifications. The quantity may vary, but it is commonly available in single units or multiples of ten.

Specifications

  • Model: AS4C8M16S-6BINTR
  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Organization: 8M x 16 bits
  • Speed: 6ns (nanoseconds)
  • Voltage: 3.3V
  • Interface: Parallel
  • Operating Temperature: -40°C to +85°C
  • Package Type: Dual In-Line Memory Module (DIMM)
  • Pin Count: 168

Detailed Pin Configuration

The pin configuration of AS4C8M16S-6BINTR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. VSS
  11. DQ8
  12. DQ9
  13. DQ10
  14. DQ11
  15. DQ12
  16. DQ13
  17. DQ14
  18. DQ15
  19. VSS
  20. A0
  21. A1
  22. A2
  23. A3
  24. A4
  25. A5
  26. A6
  27. A7
  28. A8
  29. A9
  30. A10
  31. A11
  32. A12
  33. A13
  34. A14
  35. A15
  36. A16
  37. A17
  38. A18
  39. A19
  40. A20
  41. A21
  42. A22
  43. A23
  44. A24
  45. A25
  46. A26
  47. A27
  48. A28
  49. A29
  50. A30
  51. A31
  52. BA0
  53. BA1
  54. RAS#
  55. CAS#
  56. WE#
  57. CS#
  58. CKE
  59. CLK
  60. DQM0
  61. DQM1
  62. VCC
  63. VSS
  64. NC 65-168. NC

Functional Features

AS4C8M16S-6BINTR offers the following functional features:

  1. High-speed data access: It provides fast read and write operations, enabling efficient data processing.
  2. Burst mode support: AS4C8M16S-6BINTR supports burst mode, allowing for consecutive data transfers without the need for repeated address input.
  3. Auto-refresh capability: It has an auto-refresh feature that ensures the integrity of stored data by periodically refreshing the memory cells.
  4. Power-saving modes: The module includes power-saving modes to reduce energy consumption during idle periods.
  5. Error correction: AS4C8M16S-6BINTR incorporates error correction techniques to detect and correct data errors, enhancing data reliability.

Advantages and Disadvantages

Advantages

  • High-speed operation improves overall system performance.
  • Large storage capacity accommodates a significant amount of data.
  • Low power consumption contributes to energy efficiency.
  • Reliable performance ensures data integrity and system stability.
  • Compact package allows for easy installation and compatibility.

Disadvantages

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät AS4C8M16S-6BINTR :n soveltamiseen teknisissä ratkaisuissa

Sure! Here are 10 common questions and answers related to the application of AS4C8M16S-6BINTR in technical solutions:

  1. Question: What is AS4C8M16S-6BINTR?
    - Answer: AS4C8M16S-6BINTR is a specific type of synchronous dynamic random-access memory (SDRAM) chip commonly used in various electronic devices.

  2. Question: What is the capacity of AS4C8M16S-6BINTR?
    - Answer: AS4C8M16S-6BINTR has a capacity of 8 megabytes (MB), with each memory cell storing 16 bits of data.

  3. Question: What does the "6BINTR" in AS4C8M16S-6BINTR represent?
    - Answer: The "6BINTR" represents the speed grade and timing parameters of the SDRAM chip, indicating its performance characteristics.

  4. Question: In what types of technical solutions can AS4C8M16S-6BINTR be used?
    - Answer: AS4C8M16S-6BINTR can be used in a wide range of technical solutions, including computer systems, networking equipment, telecommunications devices, and embedded systems.

  5. Question: What is the operating voltage of AS4C8M16S-6BINTR?
    - Answer: AS4C8M16S-6BINTR operates at a standard voltage of 3.3 volts (V).

  6. Question: Does AS4C8M16S-6BINTR support error correction?
    - Answer: No, AS4C8M16S-6BINTR does not have built-in error correction capabilities. It is a non-ECC (Error-Correcting Code) memory chip.

  7. Question: What is the maximum clock frequency supported by AS4C8M16S-6BINTR?
    - Answer: AS4C8M16S-6BINTR supports a maximum clock frequency of 166 megahertz (MHz).

  8. Question: Can AS4C8M16S-6BINTR be used in both single and dual-channel configurations?
    - Answer: Yes, AS4C8M16S-6BINTR can be used in both single-channel and dual-channel memory configurations, depending on the system requirements.

  9. Question: Is AS4C8M16S-6BINTR compatible with different memory controllers?
    - Answer: Yes, AS4C8M16S-6BINTR is designed to be compatible with various memory controllers that support SDRAM interfaces.

  10. Question: Are there any specific temperature or environmental considerations for AS4C8M16S-6BINTR?
    - Answer: AS4C8M16S-6BINTR is typically designed to operate within a specified temperature range, usually between 0°C and 70°C. It is important to adhere to the manufacturer's guidelines for proper usage and storage conditions.