AS7C256A-12JINTR

Product Overview

Category

AS7C256A-12JINTR belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile storage
• Compact size

Package

AS7C256A-12JINTR comes in a small outline integrated circuit (SOIC) package.

Essence

The essence of AS7C256A-12JINTR lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

This product is typically packaged in reels or tubes, with each containing a specific quantity of AS7C256A-12JINTR units.

Specifications

• Part Number: AS7C256A-12JINTR
• Memory Size: 256 kilobits (32 kilobytes)
• Access Time: 120 nanoseconds
• Operating Voltage: 5 volts
• Organization: 32K x 8 bits
• Interface: Parallel
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

AS7C256A-12JINTR has a total of 28 pins. The pin configuration is as follows:

1. A0-A14: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE: Write Enable
4. OE: Output Enable
5. CE: Chip Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Fast access time allows for quick data retrieval.
• Low power consumption makes it suitable for battery-powered devices.
• Non-volatile storage ensures data retention even when power is lost.
• Compact size enables integration into space-constrained designs.

Advantages and Disadvantages

Advantages

• High-speed operation enhances overall system performance.
• Low power consumption prolongs battery life.
• Non-volatile storage ensures data integrity during power interruptions.
• Compact size facilitates integration into various electronic devices.

Disadvantages

• Limited memory capacity compared to higher-end alternatives.
• Parallel interface may limit compatibility with certain systems.
• Relatively higher cost per kilobit compared to larger memory devices.

Working Principles

AS7C256A-12JINTR operates based on the principles of semiconductor memory technology. It utilizes a combination of transistors and capacitors to store and retrieve digital information. The memory cells are organized in a grid-like structure, with each cell representing a bit of data. By applying appropriate voltage levels to the address inputs and control signals, the desired data can be read from or written to the memory array.

Detailed Application Field Plans

AS7C256A-12JINTR finds applications in various electronic devices, including but not limited to: - Microcontrollers - Embedded systems - Communication equipment - Industrial automation systems - Consumer electronics

Detailed and Complete Alternative Models

1. AS6C256K8-55BIN: 256 kilobit CMOS SRAM, 55 nanoseconds access time, parallel interface.
2. IS62WV25616BLL-55TLI: 256 kilobit low-power SRAM, 55 nanoseconds access time, parallel interface.
3. M48Z02-150PC1: 256 kilobit non-volatile SRAM, 150 nanoseconds access time, parallel interface.

These alternative models offer similar functionality and can be considered as substitutes for AS7C256A-12JINTR depending on specific requirements and design constraints.

In conclusion, AS7C256A-12JINTR is a high-speed, low-power semiconductor memory device primarily used for data storage and retrieval. Its compact size, non-volatile storage, and efficient operation make it suitable for a wide range of electronic applications. However, its limited memory capacity and parallel interface should be considered when selecting alternatives.