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BLF6G38-10G,112
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BLF6G38-10G,112

Product Overview

Category: RF Power Transistor
Use: Amplification of radio frequency signals
Characteristics: High power, high efficiency, compact size
Package: SOT539A
Essence: Gallium Nitride (GaN) technology
Packaging/Quantity: Tape and reel, 800 units per reel

Specifications

  • Frequency Range: 3.4 - 3.8 GHz
  • Output Power: 10 W
  • Gain: 16 dB
  • Efficiency: 55%
  • Voltage: 32 V
  • Current: 1.5 A
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

The BLF6G38-10G,112 has a 4-pin configuration: 1. Gate 1 2. Drain 3. Source 4. Gate 2

Functional Features

  • High linearity
  • Excellent thermal stability
  • Integrated ESD protection
  • Low parasitic inductances

Advantages and Disadvantages

Advantages: - High power density - Wide bandwidth - High efficiency

Disadvantages: - Sensitivity to voltage spikes - Higher cost compared to traditional transistors

Working Principles

The BLF6G38-10G,112 operates on the principle of amplifying RF signals using GaN technology. When a signal is applied to the gate, it modulates the conductivity of the device, allowing for efficient amplification of the input signal.

Detailed Application Field Plans

This transistor is ideal for use in: - Base stations - Radar systems - Wireless communication systems - Satellite communication

Detailed and Complete Alternative Models

  • BLF6G20-10G,112
  • BLF6G22-10G,112
  • BLF6G30-10G,112

Note: The above information provides a comprehensive overview of the BLF6G38-10G,112, covering its product details, specifications, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät BLF6G38-10G,112 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the operating frequency range of BLF6G38-10G,112?

    • The operating frequency range of BLF6G38-10G,112 is typically from 0.1 to 6 GHz.

  2. What is the maximum power output of BLF6G38-10G,112?

    • BLF6G38-10G,112 can deliver a maximum power output of 10 watts.

  3. What are the typical applications for BLF6G38-10G,112?

    • BLF6G38-10G,112 is commonly used in RF energy applications, such as industrial heating and drying systems.

  4. What is the recommended supply voltage for BLF6G38-10G,112?

    • The recommended supply voltage for BLF6G38-10G,112 is typically around 32 volts.

  5. Does BLF6G38-10G,112 require external matching networks?

    • Yes, BLF6G38-10G,112 requires external matching networks for optimal performance.

  6. What is the typical gain of BLF6G38-10G,112?

    • The typical gain of BLF6G38-10G,112 is around 13 dB.

  7. Is BLF6G38-10G,112 suitable for high-power RF amplifier designs?

    • Yes, BLF6G38-10G,112 is well-suited for high-power RF amplifier designs.

  8. What is the thermal resistance of BLF6G38-10G,112?

    • The thermal resistance of BLF6G38-10G,112 is typically around 0.9°C/W.

  9. Can BLF6G38-10G,112 be used in pulsed RF applications?

    • Yes, BLF6G38-10G,112 is suitable for pulsed RF applications.

  10. Are evaluation boards available for BLF6G38-10G,112?

    • Yes, evaluation boards are available to facilitate testing and prototyping with BLF6G38-10G,112.