BLF8G24LS-200P,112

Product Overview

The BLF8G24LS-200P,112 belongs to the category of RF power transistors and is designed for use in high-frequency applications. This transistor exhibits high power gain, efficiency, and linearity, making it suitable for various RF power amplification needs. The package includes a single transistor and essential documentation.

Basic Information

• Category: RF Power Transistor
• Use: High-frequency RF power amplification
• Characteristics: High power gain, efficiency, and linearity
• Package: Single transistor with documentation
• Essence: High-performance RF power amplification
• Packaging/Quantity: Individual packaging

Specifications

• Model: BLF8G24LS-200P,112
• Frequency Range: 2400-2500 MHz
• Output Power: 200W
• Voltage: 32V
• Current: 14A
• Gain: 24dB
• Efficiency: 60%

Detailed Pin Configuration

The BLF8G24LS-200P,112 features a detailed pin configuration as follows: 1. Collector (C) 2. Base (B) 3. Emitter (E) 4. Source (S) 5. Gate (G)

Functional Features

• High power gain for efficient signal amplification
• Excellent linearity for minimal distortion
• Wide frequency range coverage for versatile applications
• Robust construction for reliable performance in demanding environments

Advantages and Disadvantages

Advantages

• High power gain and efficiency
• Wide frequency range coverage
• Robust and reliable construction

Disadvantages

• Limited voltage and current handling capacity compared to some alternative models

Working Principles

The BLF8G24LS-200P,112 operates based on the principles of RF power amplification, utilizing its high gain and efficiency to amplify input signals within the specified frequency range. The transistor's internal structure and biasing allow for the controlled amplification of RF signals with minimal distortion.

Detailed Application Field Plans

The BLF8G24LS-200P,112 is ideally suited for the following application fields: - Radar systems - Wireless communication infrastructure - Satellite communication systems - Microwave links

Detailed and Complete Alternative Models

For users seeking alternative models with similar capabilities, the following options are available: 1. BLF7G22LS-300P,112 2. BLF6G20LS-250P,112 3. BLF9G26LS-150P,112

In conclusion, the BLF8G24LS-200P,112 RF power transistor offers high performance and reliability for high-frequency RF power amplification applications. Its robust design and functional features make it a valuable component in various communication and radar systems.

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