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BDW73C-S
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BDW73C-S

Product Overview

Belongs to: Semiconductor Devices
Category: Power Transistor
Use: Amplification and Switching
Characteristics: High power dissipation, high current capability, low saturation voltage
Package: TO-220AB
Essence: NPN Epitaxial Silicon Transistor
Packaging/Quantity: Bulk packaging, 50 pieces per pack

Specifications

  • Collector-Emitter Voltage (VCEO): 100V
  • Collector Current (IC): 12A
  • Power Dissipation (PD): 40W
  • DC Current Gain (hFE): 25 - 250
  • Transition Frequency (fT): 30MHz

Detailed Pin Configuration

  1. Base (B)
  2. Collector (C)
  3. Emitter (E)

Functional Features

  • High current gain
  • Low noise
  • Fast switching speed
  • Good linearity of hFE

Advantages

  • High power dissipation
  • Low saturation voltage
  • Wide range of applications

Disadvantages

  • Sensitive to overvoltage
  • Limited frequency response

Working Principles

The BDW73C-S is a bipolar junction transistor (BJT) that operates by controlling the flow of current between its collector and emitter terminals through the application of a small current at its base terminal. It amplifies or switches electronic signals in various electronic devices and circuits.

Detailed Application Field Plans

The BDW73C-S is commonly used in audio amplifiers, power supplies, motor control circuits, and high-power switching applications due to its high current capability and low saturation voltage. It is also utilized in industrial and automotive electronic systems.

Detailed and Complete Alternative Models

  • BDW73C
  • BDW74C
  • BDW75C
  • BDW76C

In conclusion, the BDW73C-S power transistor offers high power dissipation, high current capability, and low saturation voltage, making it suitable for a wide range of amplification and switching applications in various electronic systems.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät BDW73C-S :n soveltamiseen teknisissä ratkaisuissa

  1. What is BDW73C-S?

    • BDW73C-S is a high-power NPN silicon transistor designed for use in general-purpose amplifier and switching applications.

  2. What are the key specifications of BDW73C-S?

    • The key specifications of BDW73C-S include a collector current of 12A, collector-emitter voltage of 100V, and a power dissipation of 80W.

  3. In what technical solutions can BDW73C-S be used?

    • BDW73C-S can be used in audio amplifiers, power supply circuits, motor control applications, and general switching circuits.

  4. What are the typical operating conditions for BDW73C-S?

    • The typical operating conditions for BDW73C-S include a collector current of 5A, a collector-emitter voltage of 60V, and a base current of 1A.

  5. How does BDW73C-S compare to similar transistors in its class?

    • BDW73C-S offers higher power dissipation and collector current compared to many similar transistors, making it suitable for high-power applications.

  6. What are the recommended heat dissipation methods for BDW73C-S?

    • To ensure proper operation, BDW73C-S should be mounted on a heatsink to effectively dissipate heat generated during operation.

  7. Can BDW73C-S be used in automotive applications?

    • Yes, BDW73C-S can be used in automotive applications such as electronic ignition systems and motor control circuits.

  8. Are there any specific considerations for driving BDW73C-S in high-frequency applications?

    • In high-frequency applications, it's important to minimize parasitic capacitance and inductance in the circuit layout to optimize performance.

  9. What are the typical failure modes of BDW73C-S?

    • Common failure modes include thermal runaway due to inadequate heat dissipation and overvoltage stress leading to breakdown.

  10. Where can I find detailed application notes for using BDW73C-S in technical solutions?

    • Detailed application notes for BDW73C-S can be found in the product datasheet and application guides provided by the manufacturer.