ATF-531P8-TR2

Introduction

ATF-531P8-TR2 is a high-performance, low-noise enhancement mode Pseudomorphic High Electron Mobility Transistor (pHEMT) in a lead-free, RoHS-compliant, surface-mount plastic package. This device is designed for use in a wide range of applications requiring high linearity and low noise figure.

Basic Information Overview

• Category: RF Amplifier
• Use: Designed for use in high-frequency applications such as cellular infrastructure, satellite communication, and radar systems.
• Characteristics: Low noise figure, high linearity, and high gain.
• Package: Surface-mount plastic package
• Essence: High-performance, low-noise enhancement mode pHEMT
• Packaging/Quantity: Available in tape and reel packaging with 3000 units per reel.

Specifications

• Frequency Range: 100 MHz to 6 GHz
• Noise Figure: 0.35 dB at 2 GHz
• Gain: 15 dB at 2 GHz
• Input IP3: 38 dBm at 2 GHz
• Bias Voltage: 3V
• Bias Current: 70 mA

Detailed Pin Configuration

The ATF-531P8-TR2 features a 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground

Functional Features

• High linearity: The ATF-531P8-TR2 offers high input third-order intercept point (IP3), making it suitable for applications requiring linear amplification.
• Low noise figure: With a noise figure of 0.35 dB at 2 GHz, this device ensures minimal signal degradation in high-frequency systems.
• Wide frequency range: The device operates effectively across a broad frequency spectrum, from 100 MHz to 6 GHz.

Advantages and Disadvantages

Advantages

• High linearity
• Low noise figure
• Wide frequency range

Disadvantages

• Higher bias current compared to some alternative models
• Sensitive to electrostatic discharge (ESD)

Working Principles

The ATF-531P8-TR2 operates based on the principles of enhancement mode pHEMT technology, which allows for high gain and low noise figure in high-frequency applications. The device amplifies RF signals while maintaining linearity and minimizing noise.

Detailed Application Field Plans

The ATF-531P8-TR2 is well-suited for various applications, including: - Cellular infrastructure: Amplification of RF signals in base stations and repeaters. - Satellite communication: Low-noise amplification of satellite uplink signals. - Radar systems: Signal amplification in radar transceivers for target detection.

Detailed and Complete Alternative Models

• Alternative Model 1: ATF-531P8-TR1
  • Similar specifications and characteristics, but with lower bias current.
• Alternative Model 2: ATF-531P8-TR3
  • Higher input IP3 and lower noise figure, suitable for more demanding high-linearity applications.

In conclusion, the ATF-531P8-TR2 is a versatile RF amplifier offering high performance and reliability across a wide range of high-frequency applications.

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