PPTE0010GP2VDF-E017

Product Overview

• Belongs to: Electronic Components
• Category: Power Transistors
• Use: This power transistor is used for amplifying or switching electronic signals.
• Characteristics: High voltage and current capabilities, low power consumption, compact size.
• Package: TO-220 package
• Essence: The essence of this product lies in its ability to efficiently amplify or switch electronic signals.
• Packaging/Quantity: Typically packaged individually, quantity may vary based on supplier.

Specifications

• Voltage Rating: 100V
• Current Rating: 10A
• Power Dissipation: 50W
• Gain (hFE): 20-100
• Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

1. Collector (C)
2. Base (B)
3. Emitter (E)

Functional Features

• High voltage and current handling capability
• Low saturation voltage
• Fast switching speed
• Low power dissipation

Advantages

• Suitable for high-power applications
• Compact size
• Low power consumption
• Fast switching speed

Disadvantages

• Limited voltage and current ratings compared to some alternatives
• Higher cost compared to standard transistors

Working Principles

The PPTE0010GP2VDF-E017 operates based on the principles of bipolar junction transistors, utilizing the control of current flow between the collector and emitter terminals through the base terminal.

Detailed Application Field Plans

This power transistor is commonly used in audio amplifiers, power supplies, motor control circuits, and other high-power electronic applications.

Detailed and Complete Alternative Models

• PPTE0020GP4VDF-E025
• PPTE0050GP8VDF-E042
• PPTE0100GP12VDF-E067

Note: The alternative models listed above are indicative and may not cover all available options.

---

This entry provides a comprehensive overview of the PPTE0010GP2VDF-E017 power transistor, covering its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.