Infineon Technologies
Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
IPB35N12S3L26ATMA1
Näytä Yksityiskohdat DataSheets

IPB35N12S3L26ATMA1

Product Overview

Category

The IPB35N12S3L26ATMA1 belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic circuits and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IPB35N12S3L26ATMA1 is typically available in a TO-263 package.

Essence

This power MOSFET is essential for efficient power management and control in electronic devices and systems.

Packaging/Quantity

The IPB35N12S3L26ATMA1 is usually packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 120V
  • Current Rating: 35A
  • RDS(ON): 0.035Ω
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB35N12S3L26ATMA1 typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

  • High voltage and current handling capacity
  • Low on-state resistance for minimal power loss
  • Fast switching speed for efficient operation
  • Enhanced thermal performance for reliability

Advantages

  • Suitable for high-power applications
  • Low conduction losses
  • Reduced heat dissipation requirements
  • Enhanced system efficiency

Disadvantages

  • Higher cost compared to lower power MOSFETs
  • May require more complex drive circuitry

Working Principles

The IPB35N12S3L26ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB35N12S3L26ATMA1 is commonly used in: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the IPB35N12S3L26ATMA1 include: - IRF3205 - FDP8878 - STP55NF06L - AUIRF3710

In conclusion, the IPB35N12S3L26ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of high-power electronic applications, despite its higher cost and potential drive circuit complexity.

[Word Count: 366]

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IPB35N12S3L26ATMA1 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum drain-source voltage of IPB35N12S3L26ATMA1?

    • The maximum drain-source voltage of IPB35N12S3L26ATMA1 is 120V.

  2. What is the continuous drain current rating of IPB35N12S3L26ATMA1?

    • The continuous drain current rating of IPB35N12S3L26ATMA1 is 35A.

  3. What is the on-state resistance (RDS(on)) of IPB35N12S3L26ATMA1?

    • The on-state resistance (RDS(on)) of IPB35N12S3L26ATMA1 is typically 26mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IPB35N12S3L26ATMA1?

    • The gate threshold voltage of IPB35N12S3L26ATMA1 is typically 2.5V.

  5. What is the power dissipation of IPB35N12S3L26ATMA1?

    • The power dissipation of IPB35N12S3L26ATMA1 is 200W.

  6. Is IPB35N12S3L26ATMA1 suitable for automotive applications?

    • Yes, IPB35N12S3L26ATMA1 is designed for automotive applications and meets AEC-Q101 standards.

  7. What is the operating temperature range of IPB35N12S3L26ATMA1?

    • The operating temperature range of IPB35N12S3L26ATMA1 is -55°C to 175°C.

  8. Does IPB35N12S3L26ATMA1 have built-in ESD protection?

    • Yes, IPB35N12S3L26ATMA1 features built-in ESD protection.

  9. What package type does IPB35N12S3L26ATMA1 come in?

    • IPB35N12S3L26ATMA1 is available in a TO-263-7 package.

  10. Can IPB35N12S3L26ATMA1 be used in high-frequency switching applications?

    • Yes, IPB35N12S3L26ATMA1 is suitable for high-frequency switching applications due to its low RDS(on) and fast switching characteristics.