IPB50N12S3L15ATMA1
Introduction
The IPB50N12S3L15ATMA1 is a power MOSFET belonging to the category of semiconductor devices. This entry provides an overview of its basic information, specifications, detailed pin configuration, functional features, advantages and disadvantages, working principles, detailed application field plans, and alternative models.
Basic Information Overview
- Category: Semiconductor device
- Use: Power switching applications
- Characteristics: High voltage capability, low on-resistance, fast switching speed
- Package: TO263-3L
- Essence: Power MOSFET for efficient power management
- Packaging/Quantity: Typically available in reels or tubes containing multiple units
Specifications
- Voltage Rating: 1200V
- Current Rating: 50A
- On-Resistance: 75mΩ
- Gate Charge: 110nC
- Operating Temperature Range: -55°C to 150°C
- Package Type: TO-263-3L
- Mounting Type: Surface Mount
Detailed Pin Configuration
The IPB50N12S3L15ATMA1 typically has the following pin configuration: 1. Source (S) 2. Gate (G) 3. Drain (D)
Functional Features
- High voltage capability suitable for various power applications
- Low on-resistance leading to reduced conduction losses
- Fast switching speed enabling efficient power control
Advantages and Disadvantages
Advantages
- High voltage capability
- Low on-resistance
- Fast switching speed
- Suitable for high-power applications
Disadvantages
- Higher gate charge compared to some alternative models
- May require careful thermal management at high currents
Working Principles
The IPB50N12S3L15ATMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the source and drain terminals. By modulating the gate voltage, the device can efficiently switch high power loads.
Detailed Application Field Plans
The IPB50N12S3L15ATMA1 finds extensive use in various power electronics applications, including: - Switch-mode power supplies - Motor control - Inverters - Industrial power systems - Renewable energy systems
Detailed and Complete Alternative Models
Some alternative models to the IPB50N12S3L15ATMA1 include: - IRFP4568PBF - FDPF51N25T - STW45NM50FD
In conclusion, the IPB50N12S3L15ATMA1 is a high-voltage power MOSFET with excellent characteristics suitable for a wide range of power switching applications.
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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IPB50N12S3L15ATMA1 :n soveltamiseen teknisissä ratkaisuissa
What is the maximum drain-source voltage of IPB50N12S3L15ATMA1?
- The maximum drain-source voltage of IPB50N12S3L15ATMA1 is 120V.
What is the continuous drain current rating of IPB50N12S3L15ATMA1?
- The continuous drain current rating of IPB50N12S3L15ATMA1 is 50A.
What is the on-state resistance (RDS(on)) of IPB50N12S3L15ATMA1?
- The on-state resistance (RDS(on)) of IPB50N12S3L15ATMA1 is typically 12mΩ at VGS = 10V.
What is the gate threshold voltage of IPB50N12S3L15ATMA1?
- The gate threshold voltage of IPB50N12S3L15ATMA1 is typically 2.5V.
What is the maximum power dissipation of IPB50N12S3L15ATMA1?
- The maximum power dissipation of IPB50N12S3L15ATMA1 is 375W.
Is IPB50N12S3L15ATMA1 suitable for automotive applications?
- Yes, IPB50N12S3L15ATMA1 is designed for automotive applications.
What is the operating temperature range of IPB50N12S3L15ATMA1?
- The operating temperature range of IPB50N12S3L15ATMA1 is -55°C to 175°C.
Does IPB50N12S3L15ATMA1 have built-in ESD protection?
- Yes, IPB50N12S3L15ATMA1 features built-in ESD protection.
What package type does IPB50N12S3L15ATMA1 come in?
- IPB50N12S3L15ATMA1 is available in a TO-263-7 package.
Can IPB50N12S3L15ATMA1 be used in high-frequency switching applications?
- Yes, IPB50N12S3L15ATMA1 is suitable for high-frequency switching applications.