IS42S32160B-6TLI

Product Overview

Category

IS42S32160B-6TLI belongs to the category of dynamic random access memory (DRAM) modules.

Use

This product is primarily used in computer systems and electronic devices for storing and retrieving data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

IS42S32160B-6TLI is available in a small outline, dual in-line memory module (SODIMM) package.

Essence

The essence of IS42S32160B-6TLI lies in its ability to provide fast and efficient data storage and retrieval in a compact form factor.

Packaging/Quantity

IS42S32160B-6TLI is typically packaged individually and is available in various quantities depending on the customer's requirements.

Specifications

• Memory Type: Synchronous DRAM (SDRAM)
• Capacity: 512 Megabytes (MB)
• Organization: 32 Megabytes x 16 bits
• Speed: 6 nanoseconds (ns)
• Voltage: 3.3 Volts (V)
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS42S32160B-6TLI is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /CKE
42. /CLK
43. /DQM0
44. /DQM1
45. VSS

Functional Features

• High-speed data transfer rate
• Burst mode operation for efficient data access
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Programmable CAS latency for flexibility in system design

Advantages and Disadvantages

Advantages

• Fast data access speed enhances overall system performance.
• Large storage capacity allows for the handling of extensive data requirements.
• Low power consumption contributes to energy efficiency.
• Compact package size enables integration into space-constrained devices.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Limited scalability beyond a certain capacity.
• Susceptible to data loss in case of power failure without proper backup mechanisms.

Working Principles

IS42S32160B-6TLI operates based on the principles of synchronous dynamic random access memory (SDRAM). It stores data in capacitors within an array of memory cells, with each cell representing a bit of information. The stored data is accessed by sending commands and addresses through the appropriate pins, allowing for read or write operations.

Detailed Application Field Plans

IS42S32160B-6TLI finds applications in various fields, including: 1. Personal computers and laptops 2. Servers and data centers 3. Networking equipment 4. Mobile devices 5. Automotive electronics 6. Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to IS42S32160B-6TLI include: 1. MT48LC32M16A2P-75: Micron Technology Inc. 2. K4S561632H-UC75: Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: Infineon Technologies AG 4. M12L64164A-7T: Macronix International Co., Ltd. 5. AS4C32M16SB-7TCN: Alliance Memory Inc.

These alternative models offer similar specifications and functionality, providing customers with options based on their specific requirements.

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