IS61LPS51236B-200TQLI-TR

Product Overview

Category

IS61LPS51236B-200TQLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed performance
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable data retention
• Wide operating temperature range

Package

IS61LPS51236B-200TQLI-TR is available in a compact package that ensures easy integration into various electronic devices. The package provides protection against environmental factors and mechanical stress.

Essence

The essence of IS61LPS51236B-200TQLI-TR lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

IS61LPS51236B-200TQLI-TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package varies but is usually in the range of hundreds to thousands of units.

Specifications

• Part Number: IS61LPS51236B-200TQLI-TR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 36 bits
• Operating Voltage: 3.3V
• Access Time: 200 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: Thin Quad Flat Pack (TQFP)

Detailed Pin Configuration

The pin configuration of IS61LPS51236B-200TQLI-TR is as follows:

1. VCC
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. DQ16
19. DQ17
20. DQ18
21. DQ19
22. DQ20
23. DQ21
24. DQ22
25. DQ23
26. DQ24
27. DQ25
28. DQ26
29. DQ27
30. DQ28
31. DQ29
32. DQ30
33. DQ31
34. GND

Functional Features

• High-speed data access and retrieval
• Low power consumption during standby mode
• Easy integration into various electronic devices
• Reliable data retention even in harsh environments
• Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages

• Fast data access and retrieval, enhancing overall system performance
• Low power consumption, contributing to energy efficiency
• Large storage capacity, accommodating extensive data requirements
• Compact package size, enabling space-saving designs
• Reliable data retention, ensuring data integrity
• Wide operating temperature range, suitable for diverse applications

Disadvantages

• Higher cost compared to other memory technologies
• Limited scalability beyond the specified storage capacity
• Susceptible to electromagnetic interference (EMI) in certain environments

Working Principles

IS61LPS51236B-200TQLI-TR operates based on the principles of static random access memory (SRAM). It utilizes flip-flop circuits to store and retrieve data. The stored information remains intact as long as power is supplied to the device. When a read or write operation is initiated, the appropriate address is provided, and the corresponding data is accessed or modified.

Detailed Application Field Plans

IS61LPS51236B-200TQLI-TR finds applications in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Mobile devices (smartphones, tablets) - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

• IS61LV25616AL-10TLI: 256K words x 16 bits SRAM, operating voltage 3.3V, access time 10 ns, package type TQFP.
• IS61WV102416BLL-10TLI: 1M words x 16 bits SRAM, operating voltage 3.3V, access time 10 ns, package type TQFP.
• IS61WV6416BLL-10TLI: 64K words x 16 bits SRAM,