IS61LV6416-10TL

Product Overview

Category

IS61LV6416-10TL belongs to the category of Static Random Access Memory (SRAM) chips.

Use

This product is primarily used as a high-speed, low-power memory solution in various electronic devices and systems.

Characteristics

• High speed: The IS61LV6416-10TL offers fast access times, making it suitable for applications that require quick data retrieval.
• Low power consumption: This SRAM chip is designed to operate efficiently with minimal power consumption.
• Reliable performance: It provides reliable data storage and retrieval capabilities, ensuring the integrity of stored information.
• Compact package: The IS61LV6416-10TL is available in a compact package, making it suitable for space-constrained designs.
• Large storage capacity: With a capacity of 64 megabits (8 megabytes), this chip can store a significant amount of data.

Package and Quantity

The IS61LV6416-10TL is typically packaged in a Thin Small Outline Package (TSOP) or a Ball Grid Array (BGA) package. The quantity per package may vary depending on the manufacturer's specifications.

Specifications

• Organization: 8M x 16 bits
• Supply voltage: 3.3V
• Access time: 10 ns
• Operating temperature range: -40°C to +85°C
• Standby current: <1µA (typical)
• Package type: TSOP or BGA
• Pin count: 48 pins

Detailed Pin Configuration

The IS61LV6416-10TL has a total of 48 pins. The pin configuration is as follows:

Pin Name Description 1 A0-A18 Address Inputs 2 DQ0-DQ15 Data Input/Output 3 WE Write Enable 4 OE Output Enable 5 CE1 Chip Enable 1 6 CE2 Chip Enable 2 7 VCC Power Supply 8 GND Ground 9-48 NC No Connection

Functional Features

• Random access: The IS61LV6416-10TL allows for random access to any memory location, enabling efficient data retrieval.
• Simultaneous read and write operations: It supports simultaneous read and write operations, enhancing overall system performance.
• Low latency: This SRAM chip offers low latency, minimizing delays in accessing stored data.
• Easy integration: The IS61LV6416-10TL can be easily integrated into various electronic systems due to its standard interface and compatibility with common microcontrollers and processors.

Advantages and Disadvantages

Advantages

• High-speed operation
• Low power consumption
• Reliable performance
• Compact package size
• Large storage capacity

Disadvantages

• Relatively higher cost compared to other memory technologies like Dynamic RAM (DRAM)
• Limited scalability beyond the available storage capacity

Working Principles

The IS61LV6416-10TL operates based on the principles of static random access memory. It stores data using flip-flops, which retain their state as long as power is supplied. When an address is provided, the corresponding data is retrieved from or written to the memory cell. The chip utilizes control signals such as write enable (WE), output enable (OE), and chip enable (CE) to manage data access and storage operations.

Detailed Application Field Plans

The IS61LV6416-10TL finds applications in various fields, including but not limited to: - Embedded systems - Networking equipment - Communication devices - Industrial automation - Automotive electronics - Medical devices

Alternative Models

Several alternative models are available in the market that offer similar functionality to the IS61LV6416-10TL. Some notable alternatives include: - IS61LV6416-12TL: Similar specifications but with a slightly slower access time of 12 ns. - CY62167EV30LL-45ZSXI: A comparable SRAM chip with a different pin configuration and package type. - AS6C62256-55PCN: An alternative option with a lower storage capacity but faster access time.

These alternative models can be considered based on specific requirements and compatibility with the target system.

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