IS61WV51216EEBLL-10BLI-TR

Product Overview

Category

IS61WV51216EEBLL-10BLI-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Large storage capacity
• Compact package size
• Reliable performance

Package

IS61WV51216EEBLL-10BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61WV51216EEBLL-10BLI-TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Organization: 512K words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 10 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The pin configuration of IS61WV51216EEBLL-10BLI-TR is as follows:

1. Vcc
2. WE#
3. OE#
4. A0-A18
5. DQ0-DQ15
6. CE#
7. UB#/LB#
8. BYTE#
9. NC
10. GND

(Note: "#" denotes an active-low signal)

Functional Features

• Byte Write and Read Operations: Allows individual byte-level read and write operations.
• Output Enable Control: Enables or disables the output buffers to conserve power.
• Chip Enable Control: Activates or deactivates the memory chip for read and write operations.
• Write Enable Control: Enables or disables write operations.
• Data Masking: Supports byte-level masking during write operations.

Advantages

• High-speed operation enables fast data access.
• Low power consumption helps in energy-efficient designs.
• Large storage capacity accommodates a significant amount of data.
• Compact package size allows for space-saving integration into various devices.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited compatibility with certain older systems that may require different memory interfaces.
• Relatively higher cost compared to other memory technologies like Dynamic RAM (DRAM).

Working Principles

IS61WV51216EEBLL-10BLI-TR is based on Static Random Access Memory (SRAM) technology. It stores data using flip-flops, which retain their state as long as power is supplied. The memory cells are organized in a matrix, allowing simultaneous access to multiple locations. When a read or write operation is initiated, the appropriate address is provided, and the data is accessed from or written to the corresponding memory cell.

Detailed Application Field Plans

IS61WV51216EEBLL-10BLI-TR finds applications in various electronic devices and systems, including: - Personal computers - Laptops - Servers - Mobile phones - Tablets - Networking equipment - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to IS61WV51216EEBLL-10BLI-TR include: - MT48LC4M32B2P-6A: 4 Meg x 32-bit Synchronous DRAM - CY7C1041DV33-10ZSXI: 4 Meg x 16-bit Static RAM - AS6C4008-55SIN: 4 Meg x 8-bit Low Power CMOS SRAM

(Note: The above models are provided for reference and may have different specifications and pin configurations. It is recommended to consult the respective datasheets for detailed information.)

In conclusion, IS61WV51216EEBLL-10BLI-TR is a high-speed, low-power, and reliable semiconductor memory product primarily used for data storage and retrieval in various electronic devices. Its compact size, large storage capacity, and compatibility with different applications make it a versatile choice for designers and engineers in the field of electronics.