IS62WV25616EALL-55BLI-TR

Product Overview

Category: Integrated Circuit (IC)

Use: The IS62WV25616EALL-55BLI-TR is a high-speed, low-power CMOS static random access memory (SRAM) designed for various applications that require high-performance data storage.

Characteristics: - High-speed operation - Low power consumption - Non-volatile storage - Wide operating voltage range - Small form factor

Package: The IS62WV25616EALL-55BLI-TR is available in a small outline integrated circuit (SOIC) package.

Essence: This IC provides reliable and fast data storage capabilities for electronic devices, ensuring efficient data retrieval and processing.

Packaging/Quantity: The IS62WV25616EALL-55BLI-TR is typically packaged in reels or tubes, with a quantity of 2500 units per reel.

Specifications

• Memory Size: 256 kilobits (32 kilobytes)
• Organization: 32K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Access Time: 55 ns
• Standby Current: 10 µA (typical)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS62WV25616EALL-55BLI-TR has a total of 28 pins, each serving a specific function. Here is the detailed pin configuration:

1. A0-A14: Address Inputs
2. DQ0-DQ7: Data Input/Output
3. WE#: Write Enable Input
4. OE#: Output Enable Input
5. CE#: Chip Enable Input
6. UB#/LB#: Upper/Lower Byte Enable Inputs
7. VCC: Power Supply
8. GND: Ground

Functional Features

• High-speed operation allows for quick data access and retrieval.
• Low power consumption ensures energy efficiency in portable devices.
• Non-volatile storage retains data even when power is disconnected.
• Wide operating voltage range provides flexibility in various applications.
• Small form factor enables integration into space-constrained designs.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Low power consumption prolongs battery life in portable devices. - Non-volatile storage ensures data integrity during power interruptions. - Wide operating voltage range accommodates different power supply configurations. - Small form factor facilitates compact and lightweight device designs.

Disadvantages: - Relatively small memory size may limit its use in certain applications requiring larger storage capacity. - Higher cost compared to other memory technologies with similar capacities.

Working Principles

The IS62WV25616EALL-55BLI-TR operates based on the principles of static random access memory (SRAM). It utilizes flip-flops to store and retrieve data, providing fast and reliable access times. The memory cells retain their contents as long as power is supplied, making it suitable for applications that require non-volatile storage.

Detailed Application Field Plans

The IS62WV25616EALL-55BLI-TR finds application in various electronic devices and systems, including but not limited to: - Embedded systems - Networking equipment - Communication devices - Industrial control systems - Automotive electronics - Medical devices

Its high-speed operation, low power consumption, and non-volatile storage make it ideal for applications that demand efficient data storage and retrieval.

Detailed and Complete Alternative Models

• IS62WV25616BLL-55BLI-TR
• IS62WV25616DALL-55BLI-TR
• IS62WV25616EALL-55TLI-TR
• IS62WV25616BLL-55TLI-TR

These alternative models offer similar specifications and functionality, providing flexibility in choosing the most suitable option for specific application requirements.

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