IXFE34N100

Product Overview

Category: Power MOSFET
Use: High-power switching applications
Characteristics: High voltage, high current capability
Package: TO-220AB
Essence: Power conversion
Packaging/Quantity: 25 pieces per tube

Specifications

• Voltage Rating: 1000V
• Current Rating: 34A
• RDS(ON): 0.09Ω
• Gate Charge (Qg): 110nC
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

1. Gate (G)
2. Drain (D)
3. Source (S)

Functional Features

• Low on-resistance
• Fast switching speed
• High input impedance
• Avalanche ruggedness

Advantages and Disadvantages

Advantages: - High voltage rating - Low on-resistance - Wide operating temperature range

Disadvantages: - Relatively high gate charge - Larger package size compared to SMD alternatives

Working Principles

The IXFE34N100 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device.

Detailed Application Field Plans

1. Industrial power supplies
2. Motor drives
3. Renewable energy systems
4. Electric vehicle charging systems

Detailed and Complete Alternative Models

1. IXFN34N100
2. IRFP4668
3. STW34NB20

Note: The alternative models listed above are for reference purposes and may have different specifications.

This completes the English editing encyclopedia entry structure for IXFE34N100.