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IXFN170N65X2

IXFN170N65X2

Introduction

The IXFN170N65X2 is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor device
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability, low on-state resistance
  • Package: TO-268
  • Essence: Power efficiency and reliability
  • Packaging/Quantity: Typically available in reels of 1000 units

Specifications

  • Voltage Rating: 650V
  • Current Rating: 170A
  • On-State Resistance: 0.028Ω
  • Gate Threshold Voltage: 4V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The IXFN170N65X2 follows the standard pin configuration for a TO-268 package: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

  • High voltage capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate charge
  • Avalanche energy rating

Advantages and Disadvantages

Advantages

  • High power handling capacity
  • Low conduction losses
  • Fast switching speed
  • Reliable performance in high-power applications

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitivity to overvoltage conditions

Working Principles

The IXFN170N65X2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device. When a sufficient gate voltage is applied, the device allows a high current to flow between the drain and source terminals with minimal resistance.

Detailed Application Field Plans

The IXFN170N65X2 finds extensive use in the following application fields: - Switch-mode power supplies - Motor drives - Inverters - Welding equipment - Uninterruptible power supplies (UPS) - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXFN170N65X2 include: - IXFN180N10 - IXFN200N10 - IXFN220N10 - IXFN240N10

In conclusion, the IXFN170N65X2 is a highly efficient and reliable power MOSFET that caters to the demands of modern high-power electronic applications, providing superior performance and durability.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IXFN170N65X2 :n soveltamiseen teknisissä ratkaisuissa

Sure, here are 10 common questions and answers related to the application of IXFN170N65X2 in technical solutions:

  1. What is the maximum drain current of IXFN170N65X2?

    • The maximum drain current of IXFN170N65X2 is 170A.
  2. What is the maximum voltage rating of IXFN170N65X2?

    • The maximum voltage rating of IXFN170N65X2 is 650V.
  3. What type of package does IXFN170N65X2 come in?

    • IXFN170N65X2 comes in a TO-268 package.
  4. What is the typical on-state resistance of IXFN170N65X2?

    • The typical on-state resistance of IXFN170N65X2 is 0.065 ohms.
  5. Can IXFN170N65X2 be used in high-frequency applications?

    • Yes, IXFN170N65X2 can be used in high-frequency applications due to its low gate charge and intrinsic capacitances.
  6. Is IXFN170N65X2 suitable for motor control applications?

    • Yes, IXFN170N65X2 is suitable for motor control applications due to its high current and voltage ratings.
  7. What is the maximum junction temperature of IXFN170N65X2?

    • The maximum junction temperature of IXFN170N65X2 is 175°C.
  8. Does IXFN170N65X2 have built-in protection features?

    • IXFN170N65X2 has built-in overcurrent and overtemperature protection features.
  9. Can IXFN170N65X2 be used in parallel to increase current handling capability?

    • Yes, IXFN170N65X2 can be used in parallel to increase current handling capability in high-power applications.
  10. What are some common applications for IXFN170N65X2?

    • Common applications for IXFN170N65X2 include switch mode power supplies, motor drives, UPS systems, and welding equipment.