Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
IXGQ120N30TCD1

IXGQ120N30TCD1

Product Overview

  • Category: Power MOSFET
  • Use: High-power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-247
  • Essence: Efficient power management
  • Packaging/Quantity: Bulk packaging, quantity varies

Specifications

  • Voltage Rating: 120V
  • Current Rating: 30A
  • On-Resistance: Low
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  • Pin 1: Source
  • Pin 2: Gate
  • Pin 3: Drain

Functional Features

  • High voltage and current handling capability
  • Low on-resistance for efficient power transfer
  • Robust TO-247 package for thermal management

Advantages

  • Suitable for high-power switching applications
  • Low on-resistance minimizes power loss
  • Wide operating temperature range

Disadvantages

  • Relatively large package size
  • Higher gate-source voltage requirement compared to some alternatives

Working Principles

The IXGQ120N30TCD1 operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

  • Industrial motor drives
  • Power supplies
  • Renewable energy systems
  • Electric vehicle powertrains

Detailed and Complete Alternative Models

  1. IXFN44N50
    • Voltage Rating: 500V
    • Current Rating: 44A
    • Package: TO-247
  2. IRFP4668PBF
    • Voltage Rating: 200V
    • Current Rating: 130A
    • Package: TO-247

This completes the entry for IXGQ120N30TCD1 in the English editing encyclopedia format.

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IXGQ120N30TCD1 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum operating temperature of IXGQ120N30TCD1?

    • The maximum operating temperature of IXGQ120N30TCD1 is 150°C.
  2. What is the typical gate charge of IXGQ120N30TCD1?

    • The typical gate charge of IXGQ120N30TCD1 is 110nC.
  3. What is the drain-source voltage rating of IXGQ120N30TCD1?

    • The drain-source voltage rating of IXGQ120N30TCD1 is 300V.
  4. What is the on-state resistance of IXGQ120N30TCD1?

    • The on-state resistance of IXGQ120N30TCD1 is typically 120mΩ.
  5. What are the typical applications for IXGQ120N30TCD1?

    • IXGQ120N30TCD1 is commonly used in motor control, power supplies, and inverters.
  6. What is the maximum drain current of IXGQ120N30TCD1?

    • The maximum drain current of IXGQ120N30TCD1 is 120A.
  7. Does IXGQ120N30TCD1 require a heat sink for operation?

    • Yes, IXGQ120N30TCD1 may require a heat sink depending on the application and operating conditions.
  8. What is the input capacitance of IXGQ120N30TCD1?

    • The input capacitance of IXGQ120N30TCD1 is typically 5200pF.
  9. Is IXGQ120N30TCD1 suitable for high-frequency switching applications?

    • Yes, IXGQ120N30TCD1 is suitable for high-frequency switching due to its low gate charge and fast switching characteristics.
  10. What is the recommended gate voltage for driving IXGQ120N30TCD1?

    • The recommended gate voltage for driving IXGQ120N30TCD1 is typically 10V.