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IXTA180N10T
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IXTA180N10T

Product Overview

Category

The IXTA180N10T belongs to the category of power MOSFETs.

Use

It is used for high-power switching applications in various electronic devices and systems.

Characteristics

  • High voltage and current handling capability
  • Low on-state resistance
  • Fast switching speed
  • Low gate drive power requirement

Package

The IXTA180N10T is typically available in a TO-220 package, which provides good thermal performance and ease of mounting.

Essence

The essence of the IXTA180N10T lies in its ability to efficiently control high power levels with minimal losses.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 100V
  • Current Rating: 180A
  • On-State Resistance: 4.5mΩ
  • Gate Threshold Voltage: 2.5V
  • Maximum Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IXTA180N10T typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • High current-carrying capability
  • Low conduction losses
  • Fast switching times
  • Robust thermal performance

Advantages

  • Suitable for high-power applications
  • Low on-state resistance reduces power dissipation
  • Fast switching speed enables efficient operation

Disadvantages

  • Higher gate threshold voltage compared to some alternative models
  • Larger physical footprint due to TO-220 package

Working Principles

The IXTA180N10T operates based on the principles of field-effect transistors, utilizing the control of electric fields within the semiconductor material to regulate current flow between the drain and source terminals.

Detailed Application Field Plans

The IXTA180N10T is well-suited for use in: - Motor control systems - Power supplies - Inverters - Industrial automation equipment - Renewable energy systems

Detailed and Complete Alternative Models

Some alternative models to the IXTA180N10T include: - IRFP4668PbF - FDPF33N25T - STP260N4F6

In conclusion, the IXTA180N10T power MOSFET offers high-performance characteristics suitable for demanding high-power applications across various industries.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IXTA180N10T :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum drain-source voltage of IXTA180N10T?

    • The maximum drain-source voltage of IXTA180N10T is 100V.

  2. What is the continuous drain current rating of IXTA180N10T?

    • The continuous drain current rating of IXTA180N10T is 180A.

  3. What is the on-state resistance (RDS(on)) of IXTA180N10T?

    • The on-state resistance (RDS(on)) of IXTA180N10T is typically 4.5mΩ at VGS = 10V.

  4. What is the gate threshold voltage of IXTA180N10T?

    • The gate threshold voltage of IXTA180N10T is typically 2.0V.

  5. What are the recommended operating temperature range for IXTA180N10T?

    • The recommended operating temperature range for IXTA180N10T is -55°C to 175°C.

  6. What type of package does IXTA180N10T come in?

    • IXTA180N10T comes in a TO-263 package.

  7. Is IXTA180N10T suitable for high-power applications?

    • Yes, IXTA180N10T is suitable for high-power applications due to its high current and voltage ratings.

  8. Does IXTA180N10T require a heatsink for proper thermal management?

    • It is recommended to use a heatsink with IXTA180N10T for efficient thermal management, especially in high-power applications.

  9. What are some typical applications for IXTA180N10T?

    • Typical applications for IXTA180N10T include motor control, power supplies, inverters, and industrial automation.

  10. Is IXTA180N10T suitable for automotive applications?

    • Yes, IXTA180N10T is suitable for automotive applications, particularly in electric vehicle systems and battery management.