IXYS
Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
IXTH200N10T
Näytä Yksityiskohdat DataSheets

IXTH200N10T

Introduction

The IXTH200N10T is a power MOSFET belonging to the category of semiconductor devices. It is widely used in various electronic applications due to its unique characteristics and performance.

Basic Information Overview

  • Category: Power MOSFET
  • Use: The IXTH200N10T is utilized as a switching device in power electronics applications such as motor control, power supplies, and inverters.
  • Characteristics: This MOSFET exhibits low on-state resistance, high switching speed, and low gate charge, making it suitable for high-efficiency power conversion.
  • Package: The IXTH200N10T is available in a TO-247 package, which provides efficient thermal dissipation.
  • Essence: Its essence lies in providing efficient power management and control in various electronic systems.
  • Packaging/Quantity: Typically, the IXTH200N10T is supplied in reels containing a specific quantity, as per the manufacturer's specifications.

Specifications

  • Voltage Rating: 100V
  • Current Rating: 200A
  • On-State Resistance: 10mΩ
  • Gate-Source Voltage (Max): ±20V
  • Operating Temperature Range: -55°C to 175°C
  • Package Type: TO-247

Detailed Pin Configuration

The IXTH200N10T features a standard pin configuration with three terminals: gate, drain, and source. The pinout is as follows: - Gate (G) - Pin 1 - Drain (D) - Pin 2 - Source (S) - Pin 3

Functional Features

  • High Efficiency: The MOSFET's low on-state resistance contributes to minimal power losses, ensuring high efficiency in power conversion.
  • Fast Switching Speed: Its high switching speed enables rapid response in switching applications, reducing switching losses.
  • Low Gate Charge: This feature facilitates efficient gate control and minimizes drive requirements.

Advantages and Disadvantages

Advantages

  • High efficiency in power conversion
  • Fast switching speed
  • Low on-state resistance

Disadvantages

  • Sensitivity to voltage spikes
  • Potential for thermal runaway under certain conditions

Working Principles

The IXTH200N10T operates based on the principles of field-effect transistors, where the application of a voltage at the gate terminal controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can be switched on or off, enabling effective power regulation.

Detailed Application Field Plans

The IXTH200N10T finds extensive use in the following application fields: - Motor Control: Controlling the speed and direction of motors in industrial and automotive systems. - Power Supplies: Regulating and converting electrical power in various electronic devices and equipment. - Inverters: Converting DC power to AC for use in renewable energy systems and motor drives.

Detailed and Complete Alternative Models

  • IXTH200N10: A similar power MOSFET with comparable specifications and performance characteristics.
  • IRF3205: An alternative MOSFET offering similar voltage and current ratings, suitable for power electronics applications.

In conclusion, the IXTH200N10T power MOSFET serves as a crucial component in modern power electronics, offering high efficiency, fast switching, and reliable performance across diverse applications.

(Word count: 497)

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät IXTH200N10T :n soveltamiseen teknisissä ratkaisuissa

  1. What is IXTH200N10T?

    • IXTH200N10T is a power MOSFET transistor designed for high efficiency and high frequency applications.

  2. What is the maximum voltage rating of IXTH200N10T?

    • The maximum voltage rating of IXTH200N10T is 100V.

  3. What is the maximum current rating of IXTH200N10T?

    • The maximum continuous drain current rating of IXTH200N10T is 200A.

  4. What are the typical applications of IXTH200N10T?

    • IXTH200N10T is commonly used in applications such as motor control, power supplies, and inverters.

  5. What is the on-resistance of IXTH200N10T?

    • The on-resistance of IXTH200N10T is typically around 0.01 ohms.

  6. Is IXTH200N10T suitable for high-frequency switching applications?

    • Yes, IXTH200N10T is designed for high-frequency applications due to its low gate charge and fast switching characteristics.

  7. Does IXTH200N10T require a heat sink for operation?

    • Yes, IXTH200N10T may require a heat sink depending on the specific application and power dissipation requirements.

  8. What is the operating temperature range of IXTH200N10T?

    • The operating temperature range of IXTH200N10T is typically -55°C to 175°C.

  9. Can IXTH200N10T be used in automotive applications?

    • Yes, IXTH200N10T is suitable for automotive applications due to its rugged construction and high current handling capability.

  10. Where can I find the detailed datasheet for IXTH200N10T?

    • The detailed datasheet for IXTH200N10T can be found on the manufacturer's website or through authorized distributors.