MAGX-002731-180L00 is a high-power GaN-on-SiC HEMT transistor designed for use in various RF power applications. This entry provides an overview of the product, including its basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
The MAGX-002731-180L00 features a standard 4-pin configuration: 1. Gate 2. Drain 3. Source 4. Ground
The MAGX-002731-180L00 operates based on the principles of Gallium Nitride high-electron-mobility transistors (GaN HEMTs), utilizing the unique properties of GaN-on-SiC technology to deliver high-power RF amplification with improved efficiency and linearity.
The MAGX-002731-180L00 is suitable for various RF power applications, including: - Radar systems - Communication infrastructure - Electronic warfare systems - Satellite communication - Industrial, scientific, and medical (ISM) applications
In conclusion, the MAGX-002731-180L00 offers high-performance RF power amplification capabilities, making it a versatile choice for demanding applications across different industries.
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What is MAGX-002731-180L00?
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What are the typical operating conditions for MAGX-002731-180L00?
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Can MAGX-002731-180L00 be used in pulsed applications?
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