MX29GL512FHT2I-10Q

Product Overview

Category

MX29GL512FHT2I-10Q belongs to the category of flash memory chips.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: 512 megabits (64 megabytes).
• Fast read and write speeds: Allows for quick data access and transfer.
• Low power consumption: Efficient energy usage.
• Wide operating temperature range: Suitable for various environments.
• RoHS compliant: Environmentally friendly.

Package

MX29GL512FHT2I-10Q is available in a compact and durable package that ensures protection during handling and installation. The specific package type may vary depending on the manufacturer.

Essence

The essence of MX29GL512FHT2I-10Q lies in its ability to provide reliable and high-capacity storage for electronic devices, enabling efficient data management and retrieval.

Packaging/Quantity

Typically, MX29GL512FHT2I-10Q is packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary based on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Organization: 512Mbit (64M x 8)
• Voltage Supply: 2.7V - 3.6V
• Access Time: 100ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP

Detailed Pin Configuration

The MX29GL512FHT2I-10Q chip has the following pin configuration:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. A26
29. A27
30. A28
31. A29
32. A30
33. A31
34. BYTE#
35. CE#
36. WE#
37. RE#
38. WP#
39. RY/BY#
40. OE#

Functional Features

• Erase and Program Operations: Allows for data modification and storage.
• Block Locking: Provides protection against accidental erasure or modification of specific memory blocks.
• Automatic Sleep Mode: Reduces power consumption when the chip is idle.
• Error Correction Code (ECC): Enhances data integrity by detecting and correcting errors during read and write operations.
• Burst Read Mode: Enables faster data transfer rates.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Low power consumption
• Wide operating temperature range
• Block locking feature for data protection
• ECC for enhanced data integrity

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MX29GL512FHT2I-10Q utilizes NAND flash memory technology. It stores data in memory cells organized in a grid-like structure. Each cell can store multiple bits of data, allowing for high storage density. The chip uses electrical charges to represent binary data (0s and 1s) and employs various algorithms to read, write, and erase data.

Detailed Application Field Plans

MX29GL512FHT2I-10Q finds applications in a wide range of electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Gaming consoles - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MX29GL512FHT2I-10Q include: - Samsung K9F5608U0D - Micron MT29F512G08CJABAWP - Toshiba TC58NVG0S3ETA00

These models offer similar functionality and specifications, providing alternatives for designers and manufacturers based on their specific requirements.

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