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BZT52C6V8LP-TP

BZT52C6V8LP-TP Encyclopedia Entry

Product Overview

The BZT52C6V8LP-TP belongs to the category of Zener diodes and is commonly used for voltage regulation and transient suppression in electronic circuits. This diode exhibits characteristics such as a low profile package, high reliability, and precise voltage regulation. It is typically available in tape and reel packaging with a specified quantity per reel.

Specifications

  • Voltage: 6.8V
  • Power Dissipation: 500mW
  • Zener Voltage Tolerance: ±5%
  • Operating Temperature Range: -65°C to +150°C
  • Package Type: SOD-123

Pin Configuration

The BZT52C6V8LP-TP follows the standard SOD-123 pin configuration, with the anode connected to pin 1 and the cathode connected to pin 2.

Functional Features

This Zener diode provides a stable and precise voltage reference, ensuring that the voltage across it remains constant even with variations in input voltage or load conditions. It also offers protection against voltage spikes and transients, making it suitable for use in various electronic circuits.

Advantages and Disadvantages

Advantages

  • Precise voltage regulation
  • Low profile package
  • High reliability

Disadvantages

  • Limited power dissipation capability
  • Voltage tolerance of ±5% may not be suitable for some applications

Working Principles

The BZT52C6V8LP-TP operates based on the principle of the Zener effect, where it maintains a nearly constant voltage across its terminals when reverse-biased. This allows it to regulate voltage and provide protection against voltage surges.

Application Field Plans

The BZT52C6V8LP-TP finds extensive use in various applications, including: - Voltage regulation in power supplies - Overvoltage protection in electronic circuits - Signal clamping and limiting

Alternative Models

For those seeking alternatives to the BZT52C6V8LP-TP, several options are available, including: - BZX84C6V8: Similar voltage rating with a different package type - 1N4736A: Higher power dissipation capability with a similar voltage rating - MM3Z6V8ST1G: Lower voltage tolerance with a similar package type

In conclusion, the BZT52C6V8LP-TP Zener diode offers precise voltage regulation and transient suppression in a compact package, making it a versatile component in various electronic circuits.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät BZT52C6V8LP-TP :n soveltamiseen teknisissä ratkaisuissa

  1. What is the BZT52C6V8LP-TP?

    • The BZT52C6V8LP-TP is a 6.8V Zener diode designed for voltage regulation and transient suppression in electronic circuits.
  2. What are the typical applications of BZT52C6V8LP-TP?

    • It is commonly used for voltage clamping, voltage regulation, and transient protection in various electronic devices and circuits.
  3. What is the maximum power dissipation of BZT52C6V8LP-TP?

    • The maximum power dissipation of BZT52C6V8LP-TP is typically around 300mW.
  4. What is the voltage tolerance of BZT52C6V8LP-TP?

    • The voltage tolerance of BZT52C6V8LP-TP is typically ±5%.
  5. What is the operating temperature range of BZT52C6V8LP-TP?

    • The operating temperature range of BZT52C6V8LP-TP is usually between -65°C to +150°C.
  6. How does BZT52C6V8LP-TP provide transient suppression?

    • BZT52C6V8LP-TP provides transient suppression by shunting excess current when the voltage exceeds its breakdown voltage.
  7. Can BZT52C6V8LP-TP be used for overvoltage protection?

    • Yes, BZT52C6V8LP-TP can be used for overvoltage protection by diverting excessive voltage away from sensitive components.
  8. What are the package options available for BZT52C6V8LP-TP?

    • BZT52C6V8LP-TP is available in various package options such as SOD-123, SOD-323, and SOT-23.
  9. Is BZT52C6V8LP-TP suitable for low-power applications?

    • Yes, BZT52C6V8LP-TP is suitable for low-power applications due to its low leakage current and low operating voltage.
  10. Are there any specific layout considerations for using BZT52C6V8LP-TP?

    • It is recommended to place BZT52C6V8LP-TP close to the protected circuitry and minimize trace lengths to reduce parasitic inductance.