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JS28F640J3D75E
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JS28F640J3D75E

Product Overview

  • Category: Flash Memory
  • Use: Data storage in electronic devices
  • Characteristics: High capacity, fast read/write speeds, non-volatile memory
  • Package: Integrated circuit (IC)
  • Essence: Non-volatile memory chip for storing data in electronic devices
  • Packaging/Quantity: Typically sold in trays or reels containing multiple chips

Specifications

  • Capacity: 64 megabits (8 megabytes)
  • Interface: Parallel
  • Supply Voltage: 2.7V - 3.6V
  • Access Time: 70 ns
  • Erase/Program Time: 2 ms (typical)
  • Operating Temperature Range: -40°C to +85°C

Pin Configuration

The JS28F640J3D75E flash memory chip has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. A25
  28. A26
  29. A27
  30. A28
  31. A29
  32. A30
  33. A31
  34. BYTE#
  35. CE#
  36. WE#
  37. RE#
  38. WP#
  39. RY/BY#
  40. RESET#
  41. VSS
  42. DQ0
  43. DQ1
  44. DQ2
  45. DQ3
  46. DQ4
  47. DQ5
  48. DQ6

Functional Features

  • High-speed read and write operations
  • Non-volatile memory retains data even when power is disconnected
  • Erase and program operations can be performed on individual blocks
  • Built-in error correction code (ECC) for data integrity
  • Low power consumption during standby mode

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast read/write speeds - Reliable and durable - Low power consumption

Disadvantages: - Limited number of erase/write cycles - Relatively high cost compared to other storage options

Working Principles

The JS28F640J3D75E flash memory chip uses a floating gate transistor technology to store data. It consists of numerous memory cells, each capable of storing a single bit of information. The data is stored by trapping or releasing electric charge in the floating gate of the transistor. This trapped charge represents either a "0" or a "1" bit.

During read operations, the stored charge is measured to determine the value of the bit. Write and erase operations involve applying specific voltage levels to the memory cells to modify the charge in the floating gate.

Detailed Application Field Plans

The JS28F640J3D75E flash memory chip finds applications in various electronic devices, including:

  1. Mobile phones
  2. Digital cameras
  3. Portable media players
  4. Solid-state drives (SSDs)
  5. Embedded systems
  6. Automotive electronics
  7. Industrial control systems

Its high capacity, fast read/write speeds, and reliability make it suitable for storing firmware, operating systems, and user data in these devices.

Alternative Models

Here are some alternative flash memory chips that can be used as substitutes for the JS28F640J3D75E:

  1. Micron MT29F64G08CBABA
  2. Samsung K9F5608U0D
  3. Toshiba TC58NVG0S3ETA00
  4. Intel S29GL064N90TFI040

These alternative models offer similar capacities, interfaces, and performance characteristics to the JS28F640J3D75E.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät JS28F640J3D75E :n soveltamiseen teknisissä ratkaisuissa

Sure! Here are 10 common questions and answers related to the application of JS28F640J3D75E in technical solutions:

  1. Q: What is JS28F640J3D75E? A: JS28F640J3D75E is a specific model of flash memory chip manufactured by Intel.

  2. Q: What is the storage capacity of JS28F640J3D75E? A: JS28F640J3D75E has a storage capacity of 64 megabytes (MB).

  3. Q: What is the interface used to connect JS28F640J3D75E to a microcontroller or processor? A: JS28F640J3D75E uses a parallel interface, typically connected using address and data lines.

  4. Q: Can JS28F640J3D75E be used in embedded systems? A: Yes, JS28F640J3D75E is commonly used in various embedded systems, such as industrial control systems, automotive applications, and consumer electronics.

  5. Q: What is the operating voltage range of JS28F640J3D75E? A: JS28F640J3D75E operates at a voltage range of 2.7V to 3.6V.

  6. Q: Does JS28F640J3D75E support random access read and write operations? A: Yes, JS28F640J3D75E supports random access read and write operations, allowing for efficient data retrieval and modification.

  7. Q: Is JS28F640J3D75E resistant to shock and vibration? A: Yes, JS28F640J3D75E is designed to withstand shock and vibration, making it suitable for rugged environments.

  8. Q: Can JS28F640J3D75E be used for code storage in microcontrollers? A: Yes, JS28F640J3D75E can be used as a code storage solution in microcontrollers, providing non-volatile memory for program execution.

  9. Q: Does JS28F640J3D75E support hardware and software data protection features? A: Yes, JS28F640J3D75E offers various hardware and software-based data protection mechanisms, such as block locking and password protection.

  10. Q: What is the typical lifespan of JS28F640J3D75E? A: JS28F640J3D75E has a typical lifespan of several thousand erase/write cycles, ensuring reliable long-term data storage.

Please note that these answers are general and may vary depending on specific implementation details and requirements.