Micron Technology Inc.
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MT28F008B3VG-9 T TR
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MT28F008B3VG-9 T TR

Product Overview

Category

MT28F008B3VG-9 T TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

  • Non-volatile memory: The stored data is retained even when power is turned off.
  • High-speed read and write operations: Allows for quick access to stored data.
  • Compact size: The small form factor makes it suitable for integration into various electronic devices.
  • High storage capacity: Offers a large amount of storage space for data.

Package

MT28F008B3VG-9 T TR is available in a surface mount package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity storage for electronic devices.

Packaging/Quantity

MT28F008B3VG-9 T TR is typically packaged in reels and comes in quantities of 1000 units per reel.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 8 Megabits (1 Megabyte)
  • Organization: 512K words x 16 bits
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Interface: Parallel
  • Access Time: 90 ns

Detailed Pin Configuration

The detailed pin configuration of MT28F008B3VG-9 T TR is as follows:

  1. VCC - Power supply voltage
  2. A0-A18 - Address inputs
  3. DQ0-DQ15 - Data input/output
  4. WE# - Write enable
  5. CE# - Chip enable
  6. OE# - Output enable
  7. RY/BY# - Ready/Busy status
  8. WP# - Write protect
  9. VSS - Ground

Functional Features

  • Block Erase: Allows for erasing large blocks of data at once.
  • Page Program: Enables writing data to individual memory pages.
  • Read Operation: Facilitates reading stored data from the memory.
  • Error Correction Code (ECC): Provides data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast read and write operations
  • Compact size
  • Non-volatile memory

Disadvantages

  • Limited endurance: Flash memory has a finite number of erase/write cycles before it degrades.
  • Relatively higher cost compared to other types of memory.

Working Principles

MT28F008B3VG-9 T TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using different voltage levels. When data is written, the memory cells are programmed with the desired information. During read operations, the stored data is retrieved by sensing the voltage levels in the memory cells.

Detailed Application Field Plans

MT28F008B3VG-9 T TR finds applications in various electronic devices that require non-volatile storage, including: - Computers and laptops - Smartphones and tablets - Digital cameras and camcorders - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to MT28F008B3VG-9 T TR include: - MT29F008ABADAWP - S29GL064N90TFI040 - AT45DB081D-SU

These models offer similar functionality and can be used as alternatives depending on specific requirements.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MT28F008B3VG-9 T TR :n soveltamiseen teknisissä ratkaisuissa

Sure! Here are 10 common questions and answers related to the application of MT28F008B3VG-9 T TR in technical solutions:

  1. Question: What is the capacity of the MT28F008B3VG-9 T TR?
    Answer: The MT28F008B3VG-9 T TR has a capacity of 8 megabits (1 megabyte).

  2. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT28F008B3VG-9 T TR is typically between 2.7V and 3.6V.

  3. Question: Can I use this memory device in industrial applications?
    Answer: Yes, the MT28F008B3VG-9 T TR is suitable for industrial applications due to its extended temperature range and high reliability.

  4. Question: Does this memory device support random access?
    Answer: Yes, the MT28F008B3VG-9 T TR supports random access, allowing for efficient read and write operations.

  5. Question: What is the maximum clock frequency supported by this memory device?
    Answer: The MT28F008B3VG-9 T TR can operate at a maximum clock frequency of 90 MHz.

  6. Question: Is this memory device compatible with various interface standards?
    Answer: Yes, the MT28F008B3VG-9 T TR is compatible with industry-standard asynchronous and synchronous interface protocols.

  7. Question: Can I use this memory device in battery-powered devices?
    Answer: Yes, the MT28F008B3VG-9 T TR is designed to be power-efficient, making it suitable for battery-powered devices.

  8. Question: Does this memory device support hardware data protection features?
    Answer: Yes, the MT28F008B3VG-9 T TR includes hardware data protection features like program/erase lockout and block locking.

  9. Question: What is the typical access time for this memory device?
    Answer: The typical access time for the MT28F008B3VG-9 T TR is around 90 ns, ensuring fast data retrieval.

  10. Question: Can I use this memory device in automotive applications?
    Answer: Yes, the MT28F008B3VG-9 T TR meets the requirements for automotive-grade applications, including AEC-Q100 qualification.

Please note that these answers are based on general information about the MT28F008B3VG-9 T TR and may vary depending on specific application requirements.