MT28F400B3SG-8 BET TR

Product Overview

Category

MT28F400B3SG-8 BET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High-speed read and write operations
• Non-volatile memory
• Low power consumption
• Compact size
• Durable and reliable

Package

MT28F400B3SG-8 BET TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

MT28F400B3SG-8 BET TR is typically packaged in trays or reels, with each package containing a specific quantity of flash memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Flash
• Capacity: 4GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Access Time: 80ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data inputs/outputs
5. WE# - Write enable
6. CE# - Chip enable
7. OE# - Output enable
8. RP# - Ready/Busy status
9. RY/BY# - Ready/Busy output
10. WP# - Write protect

Functional Features

• High-speed data transfer
• Erase and program operations
• Error correction and detection mechanisms
• Block locking and unlocking
• Power-saving features

Advantages and Disadvantages

Advantages

• Fast read and write operations
• Compact size for easy integration
• Low power consumption
• High durability and reliability
• Error correction mechanisms ensure data integrity

Disadvantages

• Limited capacity compared to other storage options
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

MT28F400B3SG-8 BET TR utilizes a combination of electronic circuits and memory cells to store and retrieve digital information. The memory cells consist of floating-gate transistors that can be electrically programmed and erased. When data is written, charges are trapped in the floating gate, representing binary information. During read operations, the charges are sensed to determine the stored data.

Detailed Application Field Plans

MT28F400B3SG-8 BET TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

1. MT28F400B5WG-8 BET TR
2. MT28F400B3WG-8 BET TR
3. MT28F400B5WG-8 BET TR
4. MT28F400B3WG-8 BET TR
5. MT28F400B5WG-8 BET TR

These alternative models offer similar specifications and functionality to MT28F400B3SG-8 BET TR, providing users with options based on their specific requirements.

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