MT29F16G08ABACAWP-IT:C

Product Overview

Category

MT29F16G08ABACAWP-IT:C belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F16G08ABACAWP-IT:C offers a storage capacity of 16 gigabits (2 gigabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F16G08ABACAWP-IT:C comes in a compact package, enabling easy integration into various electronic devices.

Packaging/Quantity

The MT29F16G08ABACAWP-IT:C NAND flash memory is typically packaged in surface-mount technology (SMT) packages. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 16 gigabits (2 gigabytes)
• Interface: Parallel or Serial
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

The MT29F16G08ABACAWP-IT:C NAND flash memory has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output
5. WE#: Write enable
6. CE#: Chip enable
7. CLE: Command latch enable
8. ALE: Address latch enable
9. RE#: Read enable
10. R/B#: Ready/busy status

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data.
• Random Access: Provides random access to any memory location for read and write operations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance ensures data integrity.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F16G08ABACAWP-IT:C utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The stored charge determines whether the cell represents a "0" or a "1".

During write operations, data is programmed into the memory cells using high voltages. Erase operations clear the contents of selected memory blocks. Reading involves sensing the electrical charge on the memory cells to retrieve the stored data.

Detailed Application Field Plans

The MT29F16G08ABACAWP-IT:C NAND flash memory finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

1. MT29F16G08ABACAWP-IT:B
2. MT29F16G08ABACAWP-IT:D
3. MT29F16G08ABACAWP-IT:E
4. MT29F16G08ABACAWP-IT:F

These alternative models offer similar specifications and functionality to the MT29F16G08ABACAWP-IT:C NAND flash memory.

In conclusion, the MT29F16G08ABACAWP-IT:C NAND flash memory is a high-capacity storage solution with fast data transfer rates, low power consumption, and reliable performance. It is widely used in various electronic devices for data storage purposes.