MT29F1G08ABCHC-ET:C TR

Product Overview

Category

MT29F1G08ABCHC-ET:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1G08ABCHC-ET:C TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F1G08ABCHC-ET:C TR lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F1G08ABCHC-ET:C TR units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 1 Gigabit (1 Gb)
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 Megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The pin configuration of MT29F1G08ABCHC-ET:C TR is as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. RE: Read enable
4. WE: Write enable
5. A0-A18: Address inputs
6. DQ0-DQ7: Data inputs/outputs
7. R/B: Ready/busy status
8. CLE: Command latch enable
9. ALE: Address latch enable
10. WP: Write protect

Functional Features

• Page Read and Program Operations: MT29F1G08ABCHC-ET:C TR allows for efficient reading and programming of data at the page level.
• Block Erase Operation: It supports block erase operation, enabling quick deletion of large amounts of data.
• Error Correction Code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: MT29F1G08ABCHC-ET:C TR employs wear-leveling techniques to distribute write operations evenly across memory cells, prolonging its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Reliable data storage
• Suitable for various electronic devices

Disadvantages

• Limited erase/program cycles
• Vulnerable to physical damage if mishandled

Working Principles

MT29F1G08ABCHC-ET:C TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on the floating gate. To read or write data, specific voltage levels are applied to the appropriate pins, allowing for the transfer of electrons and altering the charge on the floating gate.

Detailed Application Field Plans

MT29F1G08ABCHC-ET:C TR finds applications in various fields, including: 1. Consumer Electronics: Smartphones, tablets, digital cameras, portable media players. 2. Computing: Solid-state drives (SSDs), embedded systems, industrial computers. 3. Automotive: Infotainment systems, navigation systems, advanced driver-assistance systems (ADAS). 4. Networking: Routers, switches, network storage devices. 5. Medical Devices: Patient monitoring systems, medical imaging equipment.

Detailed and Complete Alternative Models

1. MT29F1G08ABAEAWP-IT:E TR
2. MT29F1G08ABBEAWP-IT:E TR
3. MT29F1G08ABCEAWP-IT:E TR
4. MT29F1G08ABDEAWP-IT:E TR
5. MT29F1G08ABEEAWP-IT:E TR

These alternative models offer similar specifications and functionality to MT29F1G08ABCHC-ET:C TR, providing options for different application requirements.

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