MT29F2G08ABDWP:D TR

Product Overview

• Category: NAND Flash Memory
• Use: Data storage in electronic devices
• Characteristics: High capacity, non-volatile, fast read/write speeds
• Package: Wafer-level chip scale package (WLCSP)
• Essence: Non-volatile memory for storing digital data
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel NAND
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Read/Write Speed: Up to 25 MB/s
• ECC Support: Built-in Error Correction Code (ECC) functionality
• Data Retention: Up to 10 years

Pin Configuration

The MT29F2G08ABDWP:D TR features a standard pin configuration with the following pins:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A15: Address inputs
4. DQ0-DQ7: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. RE#: Read enable control
8. CLE: Command latch enable
9. ALE: Address latch enable
10. R/B#: Ready/busy status output
11. WP#: Write protect control
12. RP#: Reset/power down control

Functional Features

• High-speed data transfer: The MT29F2G08ABDWP:D TR offers fast read and write speeds, allowing for efficient data transfer.
• Error correction: Built-in ECC functionality ensures data integrity by detecting and correcting errors during read and write operations.
• Low power consumption: The NAND flash memory operates at low voltage levels, reducing power consumption in electronic devices.
• Compact package: The wafer-level chip scale package (WLCSP) provides a compact form factor, ideal for space-constrained applications.

Advantages and Disadvantages

Advantages

• High storage capacity: With 2 gigabits of memory, the MT29F2G08ABDWP:D TR offers ample storage space for various data-intensive applications.
• Fast data transfer: The high read/write speeds enable quick access to stored data, enhancing overall system performance.
• Error correction: The built-in ECC functionality ensures reliable data storage by detecting and correcting errors.
• Compact size: The WLCSP package allows for integration into small-sized electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a limited number of program/erase cycles, which may affect its lifespan in certain applications.
• Relatively higher cost: Compared to other types of memory, NAND flash memory can be more expensive, especially for higher capacities.

Working Principles

The MT29F2G08ABDWP:D TR utilizes NAND flash technology for data storage. It consists of multiple memory cells organized in a grid-like structure. Each cell stores data as electrical charges within floating gate transistors. To write data, an electric charge is applied to the appropriate memory cells, altering their state. Reading data involves sensing the electrical charges stored in the cells.

Detailed Application Field Plans

The MT29F2G08ABDWP:D TR finds application in various electronic devices, including but not limited to:

1. Smartphones and tablets
2. Solid-state drives (SSDs)
3. Digital cameras
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems

Alternative Models

1. MT29F2G08ABAEAWP:D TR
   • Similar specifications and features, but with different package options.
2. MT29F2G08ABBEAWP:D TR
   • Higher endurance version with extended program/erase cycles.
3. MT29F2G08ABCEAWP:D TR
   • Lower capacity variant with 1 gigabit (128 megabytes) of memory.

These alternative models offer flexibility in terms of package options, endurance, and capacity to cater to specific application requirements.

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