MT29F4G08AACHC:C TR

Product Overview

Category

MT29F4G08AACHC:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08AACHC:C TR offers a storage capacity of 4 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: It consumes minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G08AACHC:C TR comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G08AACHC:C TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Storage Capacity: 4 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Package Type: Surface Mount Technology (SMT)

Pin Configuration

The detailed pin configuration of the MT29F4G08AACHC:C TR can be found in the datasheet provided by the manufacturer. It includes pins for power supply, data input/output, control signals, and other necessary connections.

Functional Features

• Page Program Operation: Allows data to be written to the memory in page-sized increments.
• Block Erase Operation: Enables erasing of data at the block level, providing flexibility in managing stored information.
• Read Operation: Allows for fast and reliable retrieval of stored data.
• Error Correction Code (ECC): Incorporates advanced ECC techniques to ensure data integrity and reliability.
• Wear-Leveling Algorithm: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity enables storing large amounts of data.
• Fast data transfer rate allows for quick access to stored information.
• Low power consumption makes it suitable for battery-powered devices.
• Compact package facilitates integration into various electronic devices.
• Reliable performance with advanced error correction techniques.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles before it may become unreliable.
• Susceptible to data loss in case of power failure during write operations.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

The MT29F4G08AACHC:C TR utilizes NAND flash memory technology. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on a floating gate. The data is accessed by applying appropriate voltages to the memory cells and interpreting the resulting electrical signals.

During write operations, data is programmed into the memory cells using a page program operation. Erasing of data is performed at the block level using a block erase operation. Reading data involves retrieving the stored charge levels from the memory cells and converting them back into meaningful information.

Detailed Application Field Plans

The MT29F4G08AACHC:C TR finds applications in various electronic devices that require non-volatile data storage. Some of the common application fields include:

1. Smartphones and Tablets: Used for storing operating systems, applications, and user data.
2. Solid-State Drives (SSDs): Provides high-speed storage for computers and servers.
3. Digital Cameras: Stores captured images and videos.
4. Portable Media Players: Enables storage of multimedia content.
5. Automotive Electronics: Used for data storage in infotainment systems, navigation systems, and instrument clusters.

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP-IT: Similar NAND flash memory with a different package type.
2. MT29F4G08ABBDAH4-IT:D: Higher endurance version of the same capacity NAND flash memory.
3. MT29F4G08ABADAH4-IT:E: Lower power consumption variant of the MT29F4G08AACHC:C TR.

These alternative models offer similar functionality and can be considered as alternatives to the MT29F4G08AACHC:C TR based on specific requirements and compatibility.

Note: The mentioned alternative models are for illustrative purposes only and may not represent the latest available options in the market.

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