MT29F64G08CBAAAWP:A

Product Overview

Category

MT29F64G08CBAAAWP:A belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F64G08CBAAAWP:A offers a storage capacity of 64 gigabytes.
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: The NAND flash memory technology ensures durability and long-term reliability.
• Compact package: The product comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: MT29F64G08CBAAAWP:A is designed to consume minimal power, enhancing battery life in portable devices.

Package and Quantity

MT29F64G08CBAAAWP:A is typically packaged in a surface-mount package (SMT) and is available in various quantities depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 64 gigabytes
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 10,000 cycles

Detailed Pin Configuration

The pin configuration of MT29F64G08CBAAAWP:A is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip Enable
4. RE: Read Enable
5. WE: Write Enable
6. A0-A18: Address Inputs
7. DQ0-DQ7: Data Inputs/Outputs
8. R/B: Ready/Busy

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of data in large blocks, improving efficiency.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity for extensive data storage needs.
• Fast data transfer rate for quick access to information.
• Compact package size suitable for space-constrained devices.
• Low power consumption for improved battery life.
• Reliable performance with long-term durability.

Disadvantages

• Limited erase/program cycles compared to other non-volatile memory technologies.
• Relatively higher cost per gigabyte compared to traditional hard disk drives.

Working Principles

MT29F64G08CBAAAWP:A utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of data using a floating-gate transistor. When data is written, an electrical charge is applied to the floating gate, altering its conductivity and storing the desired information. To read the data, the charge level of each memory cell is measured, allowing the retrieval of stored information.

Detailed Application Field Plans

MT29F64G08CBAAAWP:A finds applications in various electronic devices, including: - Smartphones and tablets for data storage and app execution. - Digital cameras for storing high-resolution photos and videos. - Solid-state drives (SSDs) for fast and reliable computer storage. - Industrial control systems for data logging and program execution.

Alternative Models

Some alternative models that offer similar functionality to MT29F64G08CBAAAWP:A include: - MT29F64G08CBAAA: A variant with the same storage capacity and characteristics but a different package. - MT29F64G08CBAAAWP:B: An upgraded version with improved performance and additional features.

(Note: The alternative models mentioned above are for illustrative purposes only and may not represent the complete range of available alternatives.)

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