MT41K1G4THV-15E:M
Product Overview
Category: Memory module
Use: Used for storing and retrieving data in electronic devices
Characteristics: High-speed, high-density, non-volatile memory
Package: Integrated circuit (IC) package
Essence: Dynamic Random Access Memory (DRAM)
Packaging/Quantity: Single unit per package
Specifications
- Capacity: 1 Gigabit (1 Gb)
- Organization: 1G x 4
- Voltage: 1.35V
- Speed: 1500 MHz
- Operating Temperature Range: -40°C to +85°C
- Interface: Double Data Rate 3 (DDR3)
- Pin Count: 96
Detailed Pin Configuration
The MT41K1G4THV-15E:M memory module has a total of 96 pins. The pin configuration is as follows:
- Pins 1-12: Address Inputs (A0-A11)
- Pins 13-24: Address Inputs (BA0-BA2)
- Pins 25-36: Data Inputs/Outputs (DQ0-DQ31)
- Pins 37-40: Data Mask (DM0-DM3)
- Pins 41-44: Chip Select (CS0-CS3)
- Pins 45-48: Clock Inputs (CK0-CK1)
- Pins 49-52: Clock Enable (CKE0-CKE1)
- Pins 53-56: Clock Output (CKO0-CKO1)
- Pins 57-60: Command Inputs (C0-C3)
- Pins 61-64: Bank Address Inputs (BA0-BA3)
- Pins 65-68: Write Enable (WE0-WE3)
- Pins 69-72: Row Address Strobe (RAS0-RAS3)
- Pins 73-76: Column Address Strobe (CAS0-CAS3)
- Pins 77-80: Data Strobe (DQS0-DQS3)
- Pins 81-84: Data Strobe Mask (DM0-DM3)
- Pins 85-88: Data Strobe Output (DQSB0-DQSB3)
- Pins 89-92: VDD and VSS Power Supply
- Pin 93: No Connection (NC)
- Pin 94: Serial Presence Detect (SPD)
- Pin 95: Ground (VSS)
- Pin 96: Voltage Supply (VDD)
Functional Features
- High-speed data transfer rate
- Low power consumption
- High-density storage capacity
- Reliable and durable performance
- Error correction capabilities
Advantages and Disadvantages
Advantages: - Fast data access and retrieval - Suitable for high-performance applications - Efficient power management features - Compact size and easy integration
Disadvantages: - Relatively higher cost compared to other memory technologies - Limited lifespan due to the nature of DRAM technology - Sensitive to electrical noise and voltage fluctuations
Working Principles
The MT41K1G4THV-15E:M memory module operates based on the principles of dynamic random access memory (DRAM). It stores data in a matrix of capacitors, where each capacitor represents a single bit of information. The stored data needs to be refreshed periodically to maintain its integrity. When the device requires access to specific data, it sends the appropriate address signals to the memory module, which retrieves the corresponding data and transfers it to the requesting device.
Detailed Application Field Plans
The MT41K1G4THV-15E:M memory module is widely used in various electronic devices and systems that require high-speed and high-density data storage. Some common application fields include:
- Personal Computers (PCs) and Laptops
- Servers and Data Centers
- Gaming Consoles
- Mobile Devices (Smartphones, Tablets)
- Networking Equipment
- Automotive Electronics
- Industrial Control Systems
- Medical Devices
Detailed and Complete Alternative Models
- MT41K512M16HA-125:E
- MT41K256M16TW-107:P
- MT41K128M16JT-125:K
- MT41K64M16JT-125:K
- MT41K32M16JT-125:K
- MT41K16G8THN-125:E
- MT41K8G8THN-125:E
These alternative models offer similar specifications and functionalities to the MT41K1G4THV-15E:M memory module, catering to different capacity and organization requirements.
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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MT41K1G4THV-15E:M :n soveltamiseen teknisissä ratkaisuissa
1. What is the MT41K1G4THV-15E:M?
The MT41K1G4THV-15E:M is a specific type of memory module commonly used in technical solutions. It is a DDR3 SDRAM module with a capacity of 1 gigabit (Gb) and operates at a speed of 1500 megahertz (MHz).
2. What are the key features of the MT41K1G4THV-15E:M?
Some key features of the MT41K1G4THV-15E:M include its high-speed operation, low power consumption, and compatibility with various technical systems. It also has a small form factor and supports advanced memory technologies.
3. What applications can the MT41K1G4THV-15E:M be used for?
The MT41K1G4THV-15E:M can be used in a wide range of applications, including but not limited to servers, workstations, networking equipment, industrial automation, medical devices, and telecommunications infrastructure.
4. How does the MT41K1G4THV-15E:M compare to other memory modules?
Compared to other memory modules, the MT41K1G4THV-15E:M offers a good balance between performance, power consumption, and cost. It provides reliable and efficient memory storage for various technical solutions.
5. What is the voltage requirement for the MT41K1G4THV-15E:M?
The MT41K1G4THV-15E:M operates at a voltage of 1.35 volts (V). This low voltage requirement helps in reducing power consumption and heat generation.
6. Can the MT41K1G4THV-15E:M be used in both single-channel and dual-channel configurations?
Yes, the MT41K1G4THV-15E:M can be used in both single-channel and dual-channel memory configurations. This flexibility allows for optimized performance based on the specific technical solution's requirements.
7. What is the maximum data transfer rate of the MT41K1G4THV-15E:M?
The MT41K1G4THV-15E:M has a maximum data transfer rate of 1500 megabits per second (Mbps). This high-speed operation enables efficient data processing in technical solutions.
8. Is the MT41K1G4THV-15E:M compatible with different operating systems?
Yes, the MT41K1G4THV-15E:M is compatible with various operating systems, including Windows, Linux, and other popular platforms. It can seamlessly integrate into different technical environments.
9. Can the MT41K1G4THV-15E:M be upgraded or expanded in capacity?
No, the MT41K1G4THV-15E:M cannot be upgraded or expanded in capacity. It comes with a fixed capacity of 1 gigabit (Gb) and cannot be modified.
10. What is the warranty period for the MT41K1G4THV-15E:M?
The warranty period for the MT41K1G4THV-15E:M may vary depending on the manufacturer or supplier. It is recommended to check the specific warranty terms provided by the seller or consult the product documentation for accurate information.