Microsemi Corporation
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MRF586G

MRF586G

Introduction

The MRF586G is a high-power NPN silicon RF power transistor designed for use in industrial, scientific, and medical (ISM) applications. This transistor is part of the MRF series of transistors produced by Motorola Solutions, Inc.

Basic Information Overview

  • Category: RF Power Transistor
  • Use: Industrial, Scientific, and Medical (ISM) Applications
  • Characteristics: High-power, NPN Silicon
  • Package: TO-220AB
  • Essence: Amplification of RF signals
  • Packaging/Quantity: Available in single-unit packaging

Specifications

  • Frequency Range: 30 to 50 MHz
  • Output Power: 60 Watts
  • Gain: 13 dB
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Current - Collector (Ic) (Max): 10A
  • DC Current Gain (hFE) (Min): 10

Detailed Pin Configuration

The MRF586G transistor has a standard TO-220AB package with three pins: 1. Collector (C): Connects to the positive supply voltage. 2. Base (B): Input terminal for the control signal. 3. Emitter (E): Connects to the ground or common reference point.

Functional Features

  • High power gain and efficiency
  • Excellent linearity and ruggedness
  • Suitable for class C operation
  • Low thermal resistance

Advantages and Disadvantages

Advantages

  • High power output
  • Wide frequency range
  • Good linearity
  • Rugged construction

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires proper heat sinking for high-power applications

Working Principles

The MRF586G operates based on the principles of amplifying radio frequency signals. When a small input signal is applied to the base terminal, the transistor amplifies it to produce a larger output signal at the collector terminal. This amplification process enables the transistor to boost the power of RF signals for various applications.

Detailed Application Field Plans

The MRF586G is commonly used in RF power amplifiers for ISM applications such as industrial heating, plasma generation, and medical equipment. It is also utilized in scientific research equipment and high-frequency communication systems.

Detailed and Complete Alternative Models

  • MRF585G: Lower power version suitable for medium-power RF applications
  • MRF587G: Higher power version for extended frequency range applications

In conclusion, the MRF586G is a high-power RF transistor with excellent performance characteristics, making it well-suited for a wide range of industrial, scientific, and medical applications.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MRF586G :n soveltamiseen teknisissä ratkaisuissa

  1. What is the MRF586G transistor used for?

    • The MRF586G is a high-power, silicon NPN bipolar transistor designed for use in RF and microwave applications.

  2. What is the maximum power output of the MRF586G transistor?

    • The MRF586G can handle a maximum power output of up to 150 watts.

  3. What frequency range does the MRF586G cover?

    • The MRF586G operates within the frequency range of 30 MHz to 512 MHz.

  4. What are the typical applications of the MRF586G transistor?

    • Typical applications include industrial, scientific, medical (ISM) and broadcast transmitters, as well as aerospace and mobile radio systems.

  5. What are the key electrical characteristics of the MRF586G?

    • Key characteristics include a high gain, high efficiency, and excellent linearity.

  6. What type of package does the MRF586G come in?

    • The MRF586G is available in a hermetic, metal/ceramic package for enhanced reliability.

  7. What are the recommended operating conditions for the MRF586G?

    • The MRF586G should be operated at a supply voltage of 28 volts and a collector current of 10 amps.

  8. What are the thermal considerations for using the MRF586G in a design?

    • Proper heat sinking and thermal management are crucial for ensuring the reliable operation of the MRF586G in high-power applications.

  9. Are there any specific precautions to consider when handling the MRF586G?

    • ESD precautions should be observed, and proper grounding techniques should be employed to prevent damage to the transistor.

  10. Where can I find detailed application notes and reference designs for the MRF586G?

    • Detailed application notes and reference designs for the MRF586G can be found on the manufacturer's website or in the product datasheet.