PBSS302NX,115
Product Overview
- Belongs to: Semiconductor devices
- Category: Power transistor
- Use: Switching applications
- Characteristics: High efficiency, low power dissipation
- Package: SOT457 (SC-74)
- Essence: NPN 30 V low VCEsat (BISS) transistor
- Packaging/Quantity: Tape and reel, 3000 units per reel
Specifications
- Voltage - Collector Emitter Breakdown (Max): 30V
- Current - Collector (Ic) (Max): 3A
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 150mA, 1A
- Power Dissipation (Max): 1.25W
Detailed Pin Configuration
- Pin 1: Base
- Pin 2: Collector
- Pin 3: Emitter
- Pin 4: Not connected
- Pin 5: Not connected
Functional Features
- High switching speed
- Low collector-emitter saturation voltage
- Low power dissipation
Advantages
- Enhanced energy efficiency
- Reduced heat generation
- Compact package size
Disadvantages
- Limited maximum voltage and current ratings
- Sensitivity to overvoltage conditions
Working Principles
The PBSS302NX,115 operates as an NPN bipolar junction transistor (BJT) in switching applications. When a small current is applied to the base, it allows a larger current to flow between the collector and emitter, enabling efficient control of power circuits.
Detailed Application Field Plans
- DC-DC converters
- LED lighting
- Battery management systems
- Portable electronics
Detailed and Complete Alternative Models
- PBSS4350X,115
- PBSS5350X,115
- PBSS6350X,115
This comprehensive range of alternative models provides options with varying voltage and current ratings to suit diverse application requirements.
This entry provides a detailed overview of the PBSS302NX,115 semiconductor device, including its product information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.
Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät PBSS302NX,115 :n soveltamiseen teknisissä ratkaisuissa
Sure, here are 10 common questions and answers related to the application of PBSS302NX,115 in technical solutions:
What is PBSS302NX,115?
- PBSS302NX,115 is a NPN low VCEsat (BISS) transistor designed for high-speed switching applications.
What are the typical applications of PBSS302NX,115?
- Typical applications include DC-DC converters, load switches, and power management in portable and battery-powered products.
What is the maximum collector current rating of PBSS302NX,115?
- The maximum collector current rating is 3A.
What is the typical VCEsat value of PBSS302NX,115 at a given collector current?
- The typical VCEsat value is 0.25V at a collector current of 1A.
What is the maximum power dissipation of PBSS302NX,115?
- The maximum power dissipation is 1.25W.
Is PBSS302NX,115 suitable for high-frequency switching applications?
- Yes, PBSS302NX,115 is designed for high-speed switching applications.
Does PBSS302NX,115 have built-in protection features?
- No, PBSS302NX,115 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.
What is the operating temperature range of PBSS302NX,115?
- The operating temperature range is -65°C to 150°C.
Can PBSS302NX,115 be used in automotive applications?
- Yes, PBSS302NX,115 is AEC-Q101 qualified and suitable for automotive applications.
Are there any recommended alternative transistors to PBSS302NX,115?
- Some recommended alternatives include PBSS302NX,116 and PBSS302NX,117, which offer similar performance characteristics.
I hope these questions and answers are helpful for your technical solutions involving PBSS302NX,115! If you have any more specific questions, feel free to ask.