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PHB45NQ15T,118
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PHB45NQ15T,118

Product Category: Power MOSFET

Basic Information Overview: - Category: Power semiconductor - Use: Switching and amplifying electrical signals in power electronics applications - Characteristics: High voltage and current handling capabilities, low on-state resistance, fast switching speed - Package: TO-263AB - Essence: Efficient power management and control - Packaging/Quantity: Tape and reel, 800 units per reel

Specifications: - Voltage Rating (VDS): 150V - Continuous Drain Current (ID): 45A - RDS(ON) Max @ VGS = 10V: 9.5mΩ - Gate Threshold Voltage (VGS(th)): 2.5V to 4V - Total Gate Charge (Qg): 40nC - Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration: - Pin 1 (G): Gate - Pin 2 (D): Drain - Pin 3 (S): Source

Functional Features: - High voltage capability - Low gate charge - Enhanced power dissipation - Avalanche energy specified - Improved dv/dt capability

Advantages and Disadvantages: - Advantages: - Low on-state resistance - Fast switching speed - High reliability - Enhanced thermal performance - Disadvantages: - Sensitivity to overvoltage spikes - Potential for thermal runaway under extreme conditions

Working Principles: The PHB45NQ15T,118 operates based on the principles of field-effect transistors, utilizing the control of an electric field to modulate the flow of current through the device. When a sufficient voltage is applied to the gate terminal, it creates an electric field that allows or restricts the flow of current between the drain and source terminals.

Detailed Application Field Plans: - Switched-mode power supplies - Motor control - Inverters - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models: - IRF1405PBF - FDP8870 - STP80NF55-06

This comprehensive entry provides a detailed overview of the PHB45NQ15T,118 Power MOSFET, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät PHB45NQ15T,118 :n soveltamiseen teknisissä ratkaisuissa

  1. What is PHB45NQ15T,118?

    • PHB45NQ15T,118 is a N-channel 150 V MOSFET with a maximum RDS(on) of 4.5 mΩ.

  2. What are the typical applications for PHB45NQ15T,118?

    • It is commonly used in power supplies, motor control, and other high-current switching applications.

  3. What is the maximum voltage rating for PHB45NQ15T,118?

    • The maximum voltage rating for PHB45NQ15T,118 is 150 V.

  4. What is the maximum RDS(on) for PHB45NQ15T,118?

    • The maximum RDS(on) for PHB45NQ15T,118 is 4.5 mΩ.

  5. What is the maximum continuous drain current for PHB45NQ15T,118?

    • The maximum continuous drain current for PHB45NQ15T,118 is typically around 80 A.

  6. What is the gate-source voltage for PHB45NQ15T,118?

    • The gate-source voltage for PHB45NQ15T,118 is typically ±20 V.

  7. Is PHB45NQ15T,118 suitable for high-frequency switching applications?

    • Yes, PHB45NQ15T,118 is designed for high-speed switching applications.

  8. What are the thermal characteristics of PHB45NQ15T,118?

    • PHB45NQ15T,118 has low thermal resistance and is designed for efficient heat dissipation.

  9. Can PHB45NQ15T,118 be used in automotive applications?

    • Yes, PHB45NQ15T,118 is suitable for automotive applications due to its high voltage and current ratings.

  10. Are there any specific layout considerations when using PHB45NQ15T,118 in a circuit?

    • It is important to follow recommended PCB layout guidelines to optimize performance and minimize parasitic effects.