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MRF6S21050LSR3

MRF6S21050LSR3

Product Overview

Category: RF Power Transistor
Use: This product is used in high-frequency applications such as wireless communication, radar systems, and industrial, scientific, and medical (ISM) equipment.
Characteristics: The MRF6S21050LSR3 is known for its high power output, efficiency, and reliability in RF power amplification.
Package: The product is available in a surface-mount package.
Essence: The MRF6S21050LSR3 is designed to provide high power amplification in RF applications while maintaining efficiency and reliability.
Packaging/Quantity: The product is typically sold in reels containing a specific quantity of units.

Specifications

  • Frequency Range: 2110-2170 MHz
  • Output Power: 50 Watts
  • Gain: 14 dB
  • Efficiency: 45%
  • Voltage: 12V
  • Current: 1.5A

Detailed Pin Configuration

The MRF6S21050LSR3 has a 3-pin configuration: 1. Pin 1 (Gate): Input for the control signal. 2. Pin 2 (Drain): Output for the amplified RF signal. 3. Pin 3 (Source): Ground connection.

Functional Features

  • High power output for RF amplification.
  • High efficiency to minimize power loss.
  • Reliable performance in high-frequency applications.

Advantages and Disadvantages

Advantages: - High power output. - High efficiency. - Reliable performance.

Disadvantages: - Limited frequency range. - Requires careful handling due to its sensitivity to static electricity.

Working Principles

The MRF6S21050LSR3 operates on the principle of amplifying the input RF signal using a field-effect transistor (FET) to produce a higher power output at the desired frequency.

Detailed Application Field Plans

  • Wireless Communication: Used in base stations and transceivers for cellular and wireless communication systems.
  • Radar Systems: Employed in radar transmitters for military and civilian applications.
  • Industrial, Scientific, and Medical (ISM) Equipment: Utilized in RF heating, plasma generation, and other high-frequency applications.

Detailed and Complete Alternative Models

  1. MRF6S21140HSR3

    • Frequency Range: 2110-2170 MHz
    • Output Power: 140 Watts
    • Gain: 16 dB
    • Efficiency: 50%
    • Voltage: 24V
    • Current: 3A
  2. MRF6S21150HSR3

    • Frequency Range: 2110-2170 MHz
    • Output Power: 150 Watts
    • Gain: 18 dB
    • Efficiency: 55%
    • Voltage: 28V
    • Current: 4A

In conclusion, the MRF6S21050LSR3 is a high-power RF transistor with efficient and reliable performance, making it suitable for various high-frequency applications.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MRF6S21050LSR3 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the MRF6S21050LSR3?

    • The MRF6S21050LSR3 is a high-power RF transistor designed for use in various technical solutions, such as RF amplifiers and transmitters.
  2. What is the maximum power output of the MRF6S21050LSR3?

    • The MRF6S21050LSR3 has a maximum power output of 50 watts, making it suitable for high-power applications.
  3. What frequency range does the MRF6S21050LSR3 cover?

    • The MRF6S21050LSR3 operates within the frequency range of 2110 to 2170 MHz, making it ideal for applications in the UMTS band.
  4. What are the typical applications of the MRF6S21050LSR3?

    • Typical applications of the MRF6S21050LSR3 include base station amplifiers, wireless infrastructure, and other RF power amplifier designs.
  5. What are the key features of the MRF6S21050LSR3?

    • The MRF6S21050LSR3 features high gain, high linearity, and excellent thermal performance, making it well-suited for demanding RF applications.
  6. What is the recommended operating voltage for the MRF6S21050LSR3?

    • The recommended operating voltage for the MRF6S21050LSR3 is typically around 28 volts, but it can operate within a range of 12 to 32 volts.
  7. Does the MRF6S21050LSR3 require any external matching components?

    • Yes, the MRF6S21050LSR3 may require external matching components to optimize its performance within specific applications and circuit designs.
  8. Is the MRF6S21050LSR3 suitable for high-efficiency amplifier designs?

    • Yes, the MRF6S21050LSR3's high gain and linearity make it suitable for high-efficiency amplifier designs, especially in wireless communication systems.
  9. What thermal management considerations should be taken into account when using the MRF6S21050LSR3?

    • Proper heat sinking and thermal management are crucial for maintaining the MRF6S21050LSR3's performance and reliability, especially in high-power applications.
  10. Are there any recommended reference designs or application notes available for the MRF6S21050LSR3?

    • Yes, the manufacturer provides reference designs and application notes to assist engineers in implementing the MRF6S21050LSR3 in various technical solutions.