NXP USA Inc.
Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
MRF7S18125BHSR3
Näytä Yksityiskohdat DataSheets

MRF7S18125BHSR3

Product Overview

Category

The MRF7S18125BHSR3 belongs to the category of RF Power Transistors.

Use

It is used in high-power amplifiers for applications such as wireless infrastructure, radar systems, and industrial heating.

Characteristics

  • High power handling capability
  • Broadband performance
  • High efficiency
  • Excellent thermal stability

Package

The MRF7S18125BHSR3 is available in a compact and rugged package suitable for various mounting configurations.

Essence

The essence of this product lies in its ability to deliver high power output with exceptional efficiency across a wide frequency range.

Packaging/Quantity

The MRF7S18125BHSR3 is typically packaged individually and is available in various quantities based on customer requirements.

Specifications

  • Frequency Range: 1.8 - 1.88 GHz
  • Output Power: 125 Watts
  • Gain: 15 dB
  • Efficiency: 55%
  • Package Type: NI-1230H

Detailed Pin Configuration

The MRF7S18125BHSR3 features a 4-pin flanged ceramic package with the following pin configuration: 1. Gate 1 2. Drain 1 3. Source 2 4. Drain 2

Functional Features

  • High linearity
  • Wide bandwidth
  • Built-in ESD protection
  • Thermally enhanced package for improved heat dissipation

Advantages and Disadvantages

Advantages

  • High power output
  • Wide operating frequency range
  • Excellent thermal stability
  • Enhanced ruggedness

Disadvantages

  • Higher cost compared to lower power alternatives
  • Requires careful thermal management due to high power dissipation

Working Principles

The MRF7S18125BHSR3 operates on the principle of amplifying radio frequency signals using advanced semiconductor technology. It utilizes a combination of high gain and efficiency to deliver high power output while maintaining linearity and reliability.

Detailed Application Field Plans

The MRF7S18125BHSR3 is well-suited for use in the following applications: - Base station power amplifiers - Radar transmitters - Industrial heating systems - Broadcast transmitters

Detailed and Complete Alternative Models

Some alternative models to the MRF7S18125BHSR3 include: - MRF7S18125HR3 - MRF7S18125NBR3 - MRF7S18125NBHR3

In conclusion, the MRF7S18125BHSR3 is a high-performance RF power transistor designed for demanding applications that require high power output, wide bandwidth, and excellent thermal stability.

[Word Count: 387]

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MRF7S18125BHSR3 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the MRF7S18125BHSR3?

    • The MRF7S18125BHSR3 is a high-power RF transistor designed for use in various technical solutions, particularly in the field of radio frequency (RF) applications.

  2. What are the key features of the MRF7S18125BHSR3?

    • The MRF7S18125BHSR3 features high power gain, excellent linearity, and wide bandwidth, making it suitable for demanding RF applications.

  3. In what technical solutions can the MRF7S18125BHSR3 be used?

    • The MRF7S18125BHSR3 can be used in applications such as wireless infrastructure, radar systems, and other high-power RF designs.

  4. What is the typical operating voltage and current for the MRF7S18125BHSR3?

    • The MRF7S18125BHSR3 typically operates at a voltage of 28V and a current of 1.5A.

  5. What is the maximum power output of the MRF7S18125BHSR3?

    • The MRF7S18125BHSR3 can deliver a maximum power output of 125W.

  6. Does the MRF7S18125BHSR3 require any special heat dissipation considerations?

    • Yes, due to its high power capabilities, proper heat dissipation measures such as thermal management and heatsinking are recommended for the MRF7S18125BHSR3.

  7. What are the typical input and output impedance values for the MRF7S18125BHSR3?

    • The MRF7S18125BHSR3 typically has an input impedance of 50 ohms and an output impedance of 50 ohms.

  8. Is the MRF7S18125BHSR3 suitable for broadband applications?

    • Yes, the MRF7S18125BHSR3 offers wide bandwidth capabilities, making it suitable for broadband RF applications.

  9. Are there any recommended biasing or matching circuits for the MRF7S18125BHSR3?

    • Yes, specific biasing and matching circuits may be recommended based on the application and system requirements to optimize the performance of the MRF7S18125BHSR3.

  10. Where can I find detailed application notes and reference designs for using the MRF7S18125BHSR3 in technical solutions?

    • Detailed application notes and reference designs for the MRF7S18125BHSR3 can typically be found in the product datasheet, technical documentation provided by the manufacturer, or through authorized distributors and support channels.