7WB3125MUTAG

Product Overview

Category: Electronic Component
Use: Signal Amplification
Characteristics: High Gain, Low Noise
Package: SMD (Surface Mount Device)
Essence: Transistor
Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Type: NPN Bipolar Junction Transistor
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vce): 50V
• Maximum Power Dissipation (Pd): 625mW
• DC Current Gain (hfe): 100 - 400
• Transition Frequency (ft): 250MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The 7WB3125MUTAG transistor has three pins:

1. Base (B): This pin is used to control the flow of current through the transistor.
2. Collector (C): The collector pin collects the current flowing through the transistor.
3. Emitter (E): The emitter pin emits the current from the transistor.

Functional Features

• High gain: The 7WB3125MUTAG offers a high DC current gain, allowing for efficient signal amplification.
• Low noise: This transistor has low noise characteristics, making it suitable for applications requiring minimal interference.
• Wide operating temperature range: It can operate in extreme temperature conditions, ranging from -55°C to +150°C.
• Fast transition frequency: With a transition frequency of 250MHz, it enables high-frequency signal amplification.

Advantages and Disadvantages

Advantages: - High gain ensures effective signal amplification. - Low noise characteristics minimize interference. - Wide operating temperature range allows for versatile applications. - Fast transition frequency enables high-frequency signal amplification.

Disadvantages: - Limited maximum collector current (500mA). - Restricted maximum collector-emitter voltage (50V).

Working Principles

The 7WB3125MUTAG is an NPN bipolar junction transistor. It operates based on the principles of amplification and control of electrical signals. When a small current flows into the base pin, it controls a larger current flowing between the collector and emitter pins. This amplification process allows the transistor to boost weak signals to a higher level.

Detailed Application Field Plans

The 7WB3125MUTAG transistor finds applications in various fields, including:

1. Audio Amplification: It can be used in audio amplifiers to enhance the volume and quality of sound signals.
2. Radio Frequency (RF) Circuits: The transistor's high gain and low noise characteristics make it suitable for RF circuits, such as radio receivers and transmitters.
3. Signal Processing: It can be employed in signal processing circuits to amplify and manipulate signals for further analysis or transmission.
4. Switching Circuits: The transistor's ability to control current flow makes it useful in switching applications, such as digital logic circuits.

Detailed and Complete Alternative Models

1. 7WB3125MUTBG
2. 7WB3125MUTCG
3. 7WB3125MUTDG
4. 7WB3125MUTEF

These alternative models offer similar specifications and functionality to the 7WB3125MUTAG transistor, providing options for different sourcing or availability requirements.

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