ON Semiconductor
Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
MJE5851G
Näytä Yksityiskohdat DataSheets

MJE5851G Transistor

Product Overview

The MJE5851G is a high-voltage, high-speed NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. This transistor belongs to the category of discrete semiconductor devices and is commonly used in electronic circuits where amplification or switching of signals is required.

Basic Information Overview

  • Category: Discrete Semiconductor Device
  • Use: Amplification and Switching
  • Characteristics: High Voltage, High Speed
  • Package: TO-220
  • Essence: NPN Bipolar Junction Transistor
  • Packaging/Quantity: Bulk packaging, typically available in reels of 1000 units

Specifications

  • Collector-Emitter Voltage (VCEO): 400V
  • Collector-Base Voltage (VCBO): 400V
  • Emitter-Base Voltage (VEBO): 9V
  • Collector Current (IC): 4A
  • Power Dissipation (PD): 40W
  • Transition Frequency (FT): 30MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The MJE5851G transistor has a standard TO-220 package with three leads: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High voltage capability
  • Fast switching speed
  • Low saturation voltage

Advantages and Disadvantages

Advantages

  • Suitable for high-power applications
  • Fast response time
  • Low power dissipation

Disadvantages

  • Relatively large package size
  • Limited frequency response compared to some specialized transistors

Working Principles

The MJE5851G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its layers to amplify or switch electronic signals.

Detailed Application Field Plans

The MJE5851G transistor finds application in various electronic circuits, including: - Power amplifiers - Switching regulators - Motor control circuits - High-voltage drivers

Detailed and Complete Alternative Models

Some alternative models to the MJE5851G include: - MJE5852G - MJE5853G - MJE5854G

In conclusion, the MJE5851G transistor is a versatile component suitable for a wide range of amplification and switching applications, offering high voltage capability, fast switching speed, and low power dissipation.

Word count: 309

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MJE5851G :n soveltamiseen teknisissä ratkaisuissa

  1. What is the MJE5851G transistor used for?

    • The MJE5851G is a high-voltage, high-speed NPN bipolar junction transistor commonly used in switching and amplification applications.

  2. What are the key specifications of the MJE5851G transistor?

    • The MJE5851G has a maximum collector-emitter voltage of 400V, a continuous collector current of 4A, and a transition frequency of 30MHz.

  3. Can the MJE5851G be used for switching applications?

    • Yes, the MJE5851G is suitable for switching applications due to its high voltage and high speed capabilities.

  4. Is the MJE5851G suitable for audio amplifier designs?

    • Yes, the MJE5851G can be used in audio amplifier designs due to its high voltage and current handling capabilities.

  5. What are some common technical solutions where the MJE5851G is used?

    • The MJE5851G is commonly used in power supply circuits, motor control, lighting control, and audio amplification.

  6. Does the MJE5851G require a heat sink in typical applications?

    • Depending on the specific application and operating conditions, the MJE5851G may require a heat sink to dissipate heat effectively.

  7. What are the typical operating temperatures for the MJE5851G?

    • The MJE5851G has a recommended operating temperature range of -65°C to 150°C.

  8. Can the MJE5851G be used in high-frequency applications?

    • While the MJE5851G has a transition frequency of 30MHz, it may not be suitable for very high-frequency applications compared to specialized RF transistors.

  9. Are there any common alternatives to the MJE5851G for similar applications?

    • Some alternatives to the MJE5851G include the MJE5852G, MJE5853G, and other high-voltage NPN transistors with similar characteristics.

  10. What precautions should be taken when designing with the MJE5851G?

    • Designers should ensure proper thermal management, consider voltage and current requirements, and follow the manufacturer's datasheet recommendations for safe and reliable operation.