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MMUN2133LT1G
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MMUN2133LT1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN transistor, low voltage operation, high current gain
Package: SOT-23
Essence: Miniature surface mount transistor for general purpose applications
Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

  • Voltage Rating: 50V
  • Current Rating: 100mA
  • Power Dissipation: 225mW
  • Transition Frequency: 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low voltage operation
  • Fast switching speed
  • Small package size

Advantages and Disadvantages

Advantages: - Small and compact - High current gain - Suitable for low voltage applications

Disadvantages: - Limited power dissipation capability - Limited voltage and current ratings

Working Principles

The MMUN2133LT1G is a small signal NPN transistor that operates by amplifying and switching electronic signals. When a small current flows into the base terminal, it controls a larger current flowing between the collector and emitter terminals, allowing for signal amplification and switching.

Detailed Application Field Plans

The MMUN2133LT1G is commonly used in audio amplifiers, signal processing circuits, and low voltage switching applications. Its small size and high current gain make it suitable for portable electronic devices and space-constrained applications.

Detailed and Complete Alternative Models

  • BC547
  • 2N2222
  • 2N3904
  • 2N4401

Note: The above list is not exhaustive and there are many other alternative models available in the market.

This completes the entry for MMUN2133LT1G, covering its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät MMUN2133LT1G :n soveltamiseen teknisissä ratkaisuissa

  1. What is MMUN2133LT1G?

    • MMUN2133LT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications.

  2. What are the key features of MMUN2133LT1G?

    • The key features include low saturation voltage, high current gain, and low equivalent on-resistance.

  3. In what technical solutions can MMUN2133LT1G be used?

    • MMUN2133LT1G can be used in audio amplifiers, signal processing circuits, motor control, and power management applications.

  4. What is the maximum collector current rating for MMUN2133LT1G?

    • The maximum collector current rating is 500mA.

  5. What is the typical current gain of MMUN2133LT1G?

    • The typical current gain is 100 to 300.

  6. Does MMUN2133LT1G have a low noise figure?

    • Yes, MMUN2133LT1G has a low noise figure, making it suitable for low-noise amplifier applications.

  7. Can MMUN2133LT1G be used in high-frequency applications?

    • While MMUN2133LT1G is not specifically designed for high-frequency applications, it can still be used in moderate frequency ranges.

  8. What is the maximum power dissipation for MMUN2133LT1G?

    • The maximum power dissipation is 350mW.

  9. Is MMUN2133LT1G RoHS compliant?

    • Yes, MMUN2133LT1G is RoHS compliant, meeting environmental standards.

  10. Are there any recommended alternative transistors to MMUN2133LT1G?

    • Some recommended alternatives include BC337, 2N2222, and 2N3904, depending on specific application requirements.