N57M5114WD10TG - English Editing Encyclopedia Entry

Product Overview

Category: Electronic Component
Use: Integrated Circuit
Characteristics: High-performance, low-power consumption
Package: 10-pin DIP (Dual Inline Package)
Essence: Memory storage and retrieval
Packaging/Quantity: Individually packaged, single unit

Specifications

• Model: N57M5114WD10TG
• Type: Dynamic Random Access Memory (DRAM)
• Capacity: 1 Megabit (128 Kilobytes)
• Voltage: 5V
• Speed: 100 nanoseconds (ns)
• Organization: 64K x 16 bits
• Refresh Mode: Auto-refresh
• Operating Temperature: -40°C to +85°C
• Pin Count: 10 pins
• Pin Pitch: 2.54mm

Detailed Pin Configuration

1. Vcc (+5V Power Supply)
2. A0-A15 (Address Inputs)
3. DQ0-DQ15 (Data Input/Output)
4. /RAS (Row Address Strobe)
5. /CAS (Column Address Strobe)
6. /WE (Write Enable)
7. /OE (Output Enable)
8. NC (No Connection)
9. GND (Ground)
10. Vcc (+5V Power Supply)

Functional Features

• High-speed data access and retrieval
• Low power consumption
• Auto-refresh capability for maintaining data integrity
• Easy integration with microcontrollers and other ICs
• Reliable performance in extreme temperature conditions

Advantages

• Compact size and lightweight design
• Cost-effective solution for memory storage needs
• Compatible with a wide range of electronic devices
• Efficient data transfer and processing capabilities
• Suitable for both consumer and industrial applications

Disadvantages

• Limited storage capacity compared to modern memory technologies
• Relatively slower data transfer speed compared to newer DRAMs
• Requires external refresh circuitry for continuous operation

Working Principles

The N57M5114WD10TG is a dynamic random access memory (DRAM) chip that stores and retrieves digital information. It operates by storing data in capacitors within an array of memory cells, which are organized in rows and columns. The row and column addresses provided through the address inputs select specific memory locations for read or write operations. The /RAS, /CAS, /WE, and /OE control signals enable the appropriate operations on the selected memory location.

Detailed Application Field Plans

1. Computer Systems: Used as main memory in early computer systems due to its cost-effectiveness and compatibility.
2. Embedded Systems: Integrated into microcontrollers and other embedded devices for data storage and processing.
3. Communication Equipment: Utilized in networking devices, routers, and switches for buffering and caching purposes.
4. Industrial Control Systems: Employed in automation systems, PLCs, and robotics for storing program instructions and data.
5. Consumer Electronics: Found in gaming consoles, set-top boxes, and audio/video equipment for temporary data storage.

Detailed and Complete Alternative Models

1. N57M5128WD10TG: 2 Megabit (256 Kilobytes) capacity, same specifications as N57M5114WD10TG.
2. N57M5216WD10TG: 4 Megabit (512 Kilobytes) capacity, same specifications as N57M5114WD10TG.
3. N57M5332WD10TG: 8 Megabit (1 Megabyte) capacity, same specifications as N57M5114WD10TG.

Note: Please refer to the respective datasheets for detailed specifications of the alternative models.

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