NGTB30N120FL2WG
Product Overview
- Category: Power semiconductor device
- Use: High-power switching applications
- Characteristics: Fast switching, low on-state voltage, high current capability
- Package: TO-264
- Essence: Next-generation IGBT module for power electronics
- Packaging/Quantity: Single unit packaging
Specifications
- Voltage Rating: 1200V
- Current Rating: 30A
- Module Configuration: Dual IGBT
- Gate-Emitter Voltage: ±20V
- Operating Temperature: -40°C to 150°C
- Isolation Voltage: 2500Vrms
Detailed Pin Configuration
The NGTB30N120FL2WG features a dual IGBT configuration with the following pinout: 1. Collector (C1) 2. Emitter (E1) 3. Gate (G1) 4. Collector (C2) 5. Emitter (E2) 6. Gate (G2)
Functional Features
- Fast switching speed
- Low on-state voltage drop
- High current carrying capability
- High ruggedness and reliability
Advantages and Disadvantages
Advantages
- Enhanced power efficiency
- Reduced power losses
- Improved thermal performance
- Compact form factor
Disadvantages
- Higher cost compared to traditional power devices
- Requires careful thermal management
Working Principles
The NGTB30N120FL2WG operates based on the principles of Insulated Gate Bipolar Transistor (IGBT) technology. When a positive voltage is applied to the gate terminal, it allows current to flow from the collector to the emitter, enabling high-power switching in various applications.
Detailed Application Field Plans
The NGTB30N120FL2WG is suitable for a wide range of applications including: - Motor drives - Renewable energy systems - Uninterruptible power supplies (UPS) - Induction heating - Welding equipment
Detailed and Complete Alternative Models
NGTB40N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 40A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability
NGTB25N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 25A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability
NGTB50N120FL2WG
- Voltage Rating: 1200V
- Current Rating: 50A
- Package: TO-264
- Characteristics: Fast switching, low on-state voltage, high current capability
In conclusion, the NGTB30N120FL2WG is a high-performance IGBT module designed for demanding power electronics applications, offering fast switching, low on-state voltage, and high current capability.
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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät NGTB30N120FL2WG :n soveltamiseen teknisissä ratkaisuissa
Sure, here are 10 common questions and answers related to the application of NGTB30N120FL2WG in technical solutions:
What is the maximum voltage rating of NGTB30N120FL2WG?
- The maximum voltage rating of NGTB30N120FL2WG is 1200V.
What is the maximum current rating of NGTB30N120FL2WG?
- The maximum current rating of NGTB30N120FL2WG is 30A.
What type of package does NGTB30N120FL2WG come in?
- NGTB30N120FL2WG comes in a TO-263-3 package.
What are the typical applications for NGTB30N120FL2WG?
- Typical applications for NGTB30N120FL2WG include motor control, power supplies, and inverters.
What is the on-state voltage of NGTB30N120FL2WG?
- The on-state voltage of NGTB30N120FL2WG is typically around 1.8V.
What is the switching frequency range for NGTB30N120FL2WG?
- The switching frequency range for NGTB30N120FL2WG is typically between 20kHz and 100kHz.
Does NGTB30N120FL2WG have built-in protection features?
- Yes, NGTB30N120FL2WG has built-in overcurrent and overtemperature protection.
What is the thermal resistance of NGTB30N120FL2WG?
- The thermal resistance of NGTB30N120FL2WG is typically around 1.1°C/W.
Can NGTB30N120FL2WG be used in parallel configurations?
- Yes, NGTB30N120FL2WG can be used in parallel configurations for higher current applications.
Is there a recommended gate driver for NGTB30N120FL2WG?
- It is recommended to use a gate driver with a voltage rating compatible with the NGTB30N120FL2WG and capable of delivering the required gate charge.