Rohm Semiconductor
Kuva saattaa olla esitys.
Katso tuotteen tekniset tiedot.
BR24G01F-3AGTE2
Näytä Yksityiskohdat DataSheets

BR24G01F-3AGTE2

Product Overview

Category

The BR24G01F-3AGTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices.

Characteristics

  • Non-volatile: The BR24G01F-3AGTE2 retains stored data even when power is disconnected.
  • High capacity: It offers a storage capacity of 1,024 kilobits (128 kilobytes).
  • Low power consumption: The device operates on low power, making it suitable for battery-powered applications.
  • Fast data transfer: It supports high-speed data transfer rates for efficient read and write operations.

Package

The BR24G01F-3AGTE2 comes in a compact surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and long-term data storage in electronic devices.

Packaging/Quantity

The BR24G01F-3AGTE2 is typically packaged in reels and is available in large quantities for mass production purposes.

Specifications

  • Memory capacity: 1,024 kilobits (128 kilobytes)
  • Interface: I2C (Inter-Integrated Circuit)
  • Operating voltage: 1.7V to 5.5V
  • Operating temperature range: -40°C to +85°C
  • Data retention: Up to 10 years
  • Write endurance: 1 million cycles

Detailed Pin Configuration

The BR24G01F-3AGTE2 has a total of 8 pins:

  1. VCC: Power supply input
  2. GND: Ground connection
  3. SDA: Serial data input/output pin
  4. SCL: Serial clock input pin
  5. WP: Write protect pin
  6. NC: No connection
  7. NC: No connection
  8. VSS: Ground connection

Functional Features

  • Random access: The device allows for random access to stored data, enabling efficient retrieval and modification.
  • Write protection: The WP pin can be used to protect the memory from accidental writes.
  • Page write mode: The BR24G01F-3AGTE2 supports page write operations, allowing multiple bytes of data to be written in a single operation.
  • Software write protection: The memory can be software-protected to prevent unauthorized modifications.

Advantages and Disadvantages

Advantages

  • Non-volatile memory ensures data retention even during power loss.
  • High storage capacity for various applications.
  • Low power consumption extends battery life.
  • Fast data transfer speeds enhance overall system performance.

Disadvantages

  • Limited storage capacity compared to other memory technologies.
  • Relatively higher cost per unit compared to some alternative models.

Working Principles

The BR24G01F-3AGTE2 utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping charges within floating gate transistors, which can be electrically programmed or erased. This allows for non-volatile data storage that remains intact even when power is disconnected.

Detailed Application Field Plans

The BR24G01F-3AGTE2 finds applications in various electronic devices, including but not limited to: - Consumer electronics - Automotive systems - Industrial equipment - Medical devices - Communication devices

Detailed and Complete Alternative Models

  1. BR24G01F-W2: Similar specifications with different package options.
  2. BR24G01F-WE2: Enhanced version with extended temperature range.
  3. BR24G01F-3AGTE2R: RoHS-compliant variant with identical features.

These alternative models offer similar functionality and compatibility, providing flexibility for different design requirements.

Word count: 446 words

Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät BR24G01F-3AGTE2 :n soveltamiseen teknisissä ratkaisuissa

Sure! Here are 10 common questions and answers related to the application of BR24G01F-3AGTE2 in technical solutions:

  1. Q: What is the BR24G01F-3AGTE2? A: The BR24G01F-3AGTE2 is a specific model of EEPROM (Electrically Erasable Programmable Read-Only Memory) chip manufactured by ROHM Semiconductor.

  2. Q: What is the capacity of the BR24G01F-3AGTE2? A: The BR24G01F-3AGTE2 has a capacity of 1 Megabit (128 Kilobytes) for storing data.

  3. Q: What are some typical applications of the BR24G01F-3AGTE2? A: The BR24G01F-3AGTE2 is commonly used in various technical solutions such as automotive systems, industrial equipment, consumer electronics, and IoT devices.

  4. Q: How does the BR24G01F-3AGTE2 connect to a microcontroller or other devices? A: The BR24G01F-3AGTE2 uses an I2C (Inter-Integrated Circuit) interface for communication with the microcontroller or other devices.

  5. Q: Can the BR24G01F-3AGTE2 be reprogrammed multiple times? A: Yes, the BR24G01F-3AGTE2 is an EEPROM, which means it can be electrically erased and reprogrammed multiple times.

  6. Q: What is the operating voltage range of the BR24G01F-3AGTE2? A: The BR24G01F-3AGTE2 operates within a voltage range of 1.7V to 5.5V.

  7. Q: Does the BR24G01F-3AGTE2 have any built-in security features? A: Yes, the BR24G01F-3AGTE2 includes a write protection function that can be used to prevent unauthorized modifications to the stored data.

  8. Q: Can the BR24G01F-3AGTE2 operate in extreme temperature conditions? A: Yes, the BR24G01F-3AGTE2 is designed to operate within a wide temperature range, typically from -40°C to +85°C.

  9. Q: What is the typical data retention time of the BR24G01F-3AGTE2? A: The BR24G01F-3AGTE2 has a typical data retention time of 10 years, ensuring long-term storage of information.

  10. Q: Are there any specific programming requirements for the BR24G01F-3AGTE2? A: Yes, the BR24G01F-3AGTE2 requires specific programming voltages and timing sequences, which are detailed in the datasheet provided by ROHM Semiconductor.

Please note that these answers are general and may vary depending on the specific requirements and implementation of the BR24G01F-3AGTE2 in different technical solutions.