BR24G02FV-3GTE2

Product Overview

Category

BR24G02FV-3GTE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, digital cameras, and consumer electronics.

Characteristics

• Non-volatile: The BR24G02FV-3GTE2 retains stored data even when power is disconnected.
• High capacity: This device has a storage capacity of 2 kilobits (256 bytes).
• Low power consumption: It operates on low power, making it suitable for battery-powered devices.
• Fast data transfer: The BR24G02FV-3GTE2 offers high-speed data transfer with a maximum clock frequency of 400 kHz.
• Wide operating voltage range: It can operate within a voltage range of 1.8V to 5.5V.

Package

The BR24G02FV-3GTE2 comes in a small SOP-8 package, which ensures easy integration into various circuit designs.

Essence

This product is an EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows for non-volatile data storage and retrieval.

Packaging/Quantity

The BR24G02FV-3GTE2 is typically packaged in reels containing 3,000 units per reel.

Specifications

• Storage Capacity: 2 kilobits (256 bytes)
• Operating Voltage Range: 1.8V to 5.5V
• Maximum Clock Frequency: 400 kHz
• Interface: I2C (Inter-Integrated Circuit)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 100 years (at 55°C)

Detailed Pin Configuration

The BR24G02FV-3GTE2 has a total of 8 pins, which are as follows:

1. VSS: Ground
2. SDA: Serial Data Input/Output
3. SCL: Serial Clock Input
4. WP: Write Protect
5. VCC: Power Supply
6. NC: No Connection
7. NC: No Connection
8. VSS: Ground

Functional Features

• Byte and Page Write: The BR24G02FV-3GTE2 allows individual byte or page (up to 16 bytes) write operations.
• Sequential Read: It supports sequential read operations, enabling efficient data retrieval.
• Write Protection: The WP pin can be used to protect the stored data from accidental writes.
• Software Write Protection: This feature allows software-based protection of specific memory areas.

Advantages and Disadvantages

Advantages

• Non-volatile storage ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption extends battery life.
• Fast data transfer rate enables quick access to stored information.
• Wide operating voltage range provides flexibility in different systems.

Disadvantages

• Limited storage capacity compared to other memory devices.
• Relatively higher cost per kilobit compared to larger capacity EEPROMs.
• Limited endurance cycles for write operations.

Working Principles

The BR24G02FV-3GTE2 utilizes an electrically erasable floating gate transistor technology. It stores data by trapping charges in the floating gate, which alters the threshold voltage of the transistor. This change in threshold voltage represents the stored data bit (0 or 1). The data can be written, read, and erased using specific electrical signals applied to the device.

Detailed Application Field Plans

The BR24G02FV-3GTE2 finds application in various fields, including but not limited to: - Microcontrollers and embedded systems - Digital cameras and imaging devices - Consumer electronics (e.g., smart TVs, set-top boxes) - Automotive electronics (e.g., infotainment systems, instrument clusters) - Industrial automation and control systems

Detailed and Complete Alternative Models

Some alternative models to the BR24G02FV-3GTE2 include: - AT24C02: An EEPROM from Atmel with similar specifications. - CAT24C02: A compatible EEPROM from ON Semiconductor. - M24C02: A serial I2C EEPROM from STMicroelectronics.

These alternative models offer similar functionality and can be considered as replacements based on specific requirements.

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