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SI6913DQ-T1-E3

SI6913DQ-T1-E3

Product Overview

Category

The SI6913DQ-T1-E3 belongs to the category of power MOSFETs.

Use

It is used for power management and switching applications in various electronic devices.

Characteristics

  • Low on-resistance
  • High current capability
  • Fast switching speed
  • Low gate charge

Package

The SI6913DQ-T1-E3 is available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is designed to provide efficient power management and switching capabilities in a small form factor.

Packaging/Quantity

The SI6913DQ-T1-E3 is typically packaged in reels with a quantity of 3000 units per reel.

Specifications

  • Voltage Rating: 30V
  • Continuous Drain Current: 20A
  • On-Resistance: 6.5mΩ
  • Gate Charge: 18nC
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI6913DQ-T1-E3 follows the standard pin configuration for a PowerPAK® SO-8 package: 1. Gate 2. Source 3. Source 4. Drain 5. Drain 6. Source 7. Source 8. Gate

Functional Features

  • Low on-resistance minimizes power loss
  • Fast switching speed enables efficient power management
  • High current capability allows for handling large loads
  • Enhanced thermal performance for improved reliability

Advantages

  • Compact package size
  • Efficient power management
  • Suitable for high-current applications
  • Enhanced thermal performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The SI6913DQ-T1-E3 operates based on the principles of field-effect transistors, utilizing its low on-resistance and fast switching speed to control the flow of power within electronic circuits.

Detailed Application Field Plans

The SI6913DQ-T1-E3 is well-suited for a wide range of applications, including: - DC-DC converters - Motor control systems - Power supplies - Battery management systems - LED lighting

Detailed and Complete Alternative Models

  • SI7856DP-T1-GE3
  • SI7147DP-T1-GE3
  • SI8431BB-D-IS

In conclusion, the SI6913DQ-T1-E3 power MOSFET offers efficient power management and switching capabilities in a compact package, making it suitable for various electronic applications.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät SI6913DQ-T1-E3 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum operating temperature of SI6913DQ-T1-E3?

    • The maximum operating temperature of SI6913DQ-T1-E3 is 150°C.
  2. What is the typical input voltage range for SI6913DQ-T1-E3?

    • The typical input voltage range for SI6913DQ-T1-E3 is 4.5V to 60V.
  3. What is the output current capability of SI6913DQ-T1-E3?

    • SI6913DQ-T1-E3 has an output current capability of up to 3A.
  4. Does SI6913DQ-T1-E3 have built-in overcurrent protection?

    • Yes, SI6913DQ-T1-E3 features built-in overcurrent protection.
  5. What is the typical efficiency of SI6913DQ-T1-E3?

    • The typical efficiency of SI6913DQ-T1-E3 is around 95%.
  6. Is SI6913DQ-T1-E3 suitable for automotive applications?

    • Yes, SI6913DQ-T1-E3 is suitable for automotive applications.
  7. What is the package type of SI6913DQ-T1-E3?

    • SI6913DQ-T1-E3 comes in a compact and thermally enhanced PowerPAK® SO-8 package.
  8. Does SI6913DQ-T1-E3 require external compensation components?

    • No, SI6913DQ-T1-E3 does not require external compensation components.
  9. Can SI6913DQ-T1-E3 be used in industrial power supply designs?

    • Yes, SI6913DQ-T1-E3 is suitable for use in industrial power supply designs.
  10. What are the key advantages of using SI6913DQ-T1-E3 in technical solutions?

    • The key advantages of SI6913DQ-T1-E3 include high efficiency, wide input voltage range, compact package, and built-in protection features.