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SI9410BDY-T1-GE3

SI9410BDY-T1-GE3

Product Overview

Category

The SI9410BDY-T1-GE3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • High power handling capability
  • Low on-state resistance
  • Fast switching speed
  • Enhanced thermal performance

Package

The SI9410BDY-T1-GE3 is typically available in a compact and efficient PowerPAK® SO-8 package.

Essence

This MOSFET is essential for efficient power control and management in various electronic devices and systems.

Packaging/Quantity

It is usually supplied in reels with a standard quantity of 3000 units per reel.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 17A
  • RDS(ON) (Max) @ VGS = 10V: 4.5mΩ
  • Gate-Source Voltage (VGS) ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI9410BDY-T1-GE3 features a standard SO-8 pin configuration: 1. Source 2. Gate 3. Drain 4. N/C 5. N/C 6. Drain 7. Gate 8. Source

Functional Features

  • Low conduction losses
  • High efficiency
  • Reliable and robust performance
  • Suitable for high-frequency applications

Advantages

  • Excellent thermal performance
  • Reduced power dissipation
  • Enhanced system reliability
  • Compact and space-saving design

Disadvantages

  • Sensitive to electrostatic discharge (ESD)
  • Requires careful handling during assembly and installation

Working Principles

The SI9410BDY-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. By modulating the gate-source voltage, the MOSFET can efficiently regulate power flow within a circuit.

Detailed Application Field Plans

This MOSFET is widely used in various applications, including: - Switching power supplies - DC-DC converters - Motor control - Battery management systems - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the SI9410BDY-T1-GE3 include: - SI9420DY-T1-GE3 - SI9430BDY-T1-GE3 - SI9440DY-T1-GE3

In conclusion, the SI9410BDY-T1-GE3 power MOSFET offers high-performance characteristics and is suitable for a wide range of power management applications, making it an essential component in modern electronic systems.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät SI9410BDY-T1-GE3 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum voltage rating for SI9410BDY-T1-GE3?

    • The maximum voltage rating for SI9410BDY-T1-GE3 is 30V.
  2. What is the typical on-resistance of SI9410BDY-T1-GE3?

    • The typical on-resistance of SI9410BDY-T1-GE3 is 6.5mΩ.
  3. What is the maximum continuous drain current for SI9410BDY-T1-GE3?

    • The maximum continuous drain current for SI9410BDY-T1-GE3 is 100A.
  4. What is the gate threshold voltage for SI9410BDY-T1-GE3?

    • The gate threshold voltage for SI9410BDY-T1-GE3 is typically 1.5V.
  5. Is SI9410BDY-T1-GE3 suitable for automotive applications?

    • Yes, SI9410BDY-T1-GE3 is suitable for automotive applications.
  6. What is the operating temperature range for SI9410BDY-T1-GE3?

    • The operating temperature range for SI9410BDY-T1-GE3 is -55°C to 150°C.
  7. Does SI9410BDY-T1-GE3 have built-in ESD protection?

    • Yes, SI9410BDY-T1-GE3 has built-in ESD protection.
  8. Can SI9410BDY-T1-GE3 be used in power management applications?

    • Yes, SI9410BDY-T1-GE3 can be used in power management applications.
  9. What is the package type for SI9410BDY-T1-GE3?

    • SI9410BDY-T1-GE3 comes in a PowerPAK® SO-8 package.
  10. Is SI9410BDY-T1-GE3 RoHS compliant?

    • Yes, SI9410BDY-T1-GE3 is RoHS compliant.