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SIHB30N60E-E3
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SIHB30N60E-E3

Product Overview

Category

The SIHB30N60E-E3 belongs to the category of power semiconductor devices.

Use

It is used in various power electronic applications such as motor drives, inverters, and power supplies.

Characteristics

  • High voltage and current handling capability
  • Low on-state voltage drop
  • Fast switching speed
  • Robust and reliable performance

Package

The SIHB30N60E-E3 is typically available in a TO-220AB package.

Essence

This product is essential for efficient power conversion and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 30A
  • Package Type: TO-220AB
  • Switching Speed: <100ns
  • On-State Voltage Drop: <1.5V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHB30N60E-E3 has a standard TO-220AB pin configuration: 1. Gate 2. Drain 3. Source

Functional Features

  • High voltage blocking capability
  • Low conduction losses
  • Fast and efficient switching
  • Enhanced thermal performance

Advantages

  • Enables high-power applications
  • Improved energy efficiency
  • Enhanced system reliability
  • Suitable for demanding operating conditions

Disadvantages

  • Higher cost compared to lower-rated devices
  • Requires proper thermal management for optimal performance

Working Principles

The SIHB30N60E-E3 operates based on the principles of field-effect transistors (FETs), utilizing its ability to control current flow through the channel between the drain and source terminals via the gate signal.

Detailed Application Field Plans

The SIHB30N60E-E3 is well-suited for a wide range of applications, including: - Motor drives for industrial and automotive systems - Inverters for renewable energy systems - Power supplies for consumer electronics and industrial equipment

Detailed and Complete Alternative Models

Some alternative models to the SIHB30N60E-E3 include: - IRF840 - STP30NF10 - FDPF30N60NZ

In conclusion, the SIHB30N60E-E3 is a high-performance power semiconductor device that offers efficient power control and conversion capabilities for various electronic applications. Its robust characteristics, functional features, and versatile application field plans make it a valuable component in modern power electronics systems.

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Luettele 10 yleistä kysymystä ja vastausta, jotka liittyvät SIHB30N60E-E3 :n soveltamiseen teknisissä ratkaisuissa

  1. What is the maximum voltage rating of SIHB30N60E-E3?

    • The maximum voltage rating of SIHB30N60E-E3 is 600V.

  2. What is the continuous drain current of SIHB30N60E-E3?

    • The continuous drain current of SIHB30N60E-E3 is 30A.

  3. What type of package does SIHB30N60E-E3 come in?

    • SIHB30N60E-E3 comes in a TO-220AB package.

  4. What is the on-state resistance of SIHB30N60E-E3?

    • The on-state resistance of SIHB30N60E-E3 is typically 0.19 ohms.

  5. Can SIHB30N60E-E3 be used for high-frequency switching applications?

    • Yes, SIHB30N60E-E3 is suitable for high-frequency switching applications.

  6. What is the operating temperature range of SIHB30N60E-E3?

    • The operating temperature range of SIHB30N60E-E3 is -55°C to 150°C.

  7. Is SIHB30N60E-E3 RoHS compliant?

    • Yes, SIHB30N60E-E3 is RoHS compliant.

  8. Does SIHB30N60E-E3 have built-in protection features?

    • SIHB30N60E-E3 has built-in overcurrent and thermal protection features.

  9. What are some typical applications for SIHB30N60E-E3?

    • Typical applications for SIHB30N60E-E3 include motor control, power supplies, and inverters.

  10. Is there a recommended gate driver for SIHB30N60E-E3?

    • It is recommended to use a gate driver with sufficient drive capability to fully enhance SIHB30N60E-E3.