SIHP25N60EFL-GE3

Introduction

The SIHP25N60EFL-GE3 belongs to the category of power MOSFETs and is widely used in various electronic applications. This entry provides an overview of the basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models of the SIHP25N60EFL-GE3.

Basic Information Overview

• Category: Power MOSFET
• Use: The SIHP25N60EFL-GE3 is commonly used for power switching applications in electronic circuits.
• Characteristics: It exhibits high voltage and current handling capabilities, low on-state resistance, and fast switching speeds.
• Package: The SIHP25N60EFL-GE3 is typically available in a TO-220AB package.
• Essence: It is designed to efficiently control and switch high power loads in electronic systems.
• Packaging/Quantity: The SIHP25N60EFL-GE3 is usually packaged individually or in reels of varying quantities.

Specifications

• Voltage Rating: 600V
• Current Rating: 25A
• On-State Resistance: 0.19Ω
• Gate Threshold Voltage: 2.5V
• Power Dissipation: 280W
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SIHP25N60EFL-GE3 typically has three pins: 1. Gate (G): Input pin for controlling the switching operation. 2. Drain (D): Output pin connected to the load. 3. Source (S): Ground reference for the MOSFET.

Functional Features

• High voltage and current handling capacity
• Low on-state resistance for reduced power losses
• Fast switching speeds for improved efficiency
• Enhanced thermal performance for reliable operation

Advantages and Disadvantages

Advantages

• Efficient power handling capability
• Low conduction losses
• Fast switching speed
• Reliable thermal performance

Disadvantages

• Higher cost compared to standard MOSFETs
• Sensitive to static electricity and overvoltage conditions

Working Principles

The SIHP25N60EFL-GE3 operates based on the principle of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals. When a sufficient gate voltage is applied, the MOSFET allows the passage of current, enabling power switching in electronic circuits.

Detailed Application Field Plans

The SIHP25N60EFL-GE3 finds extensive use in various applications, including: - Switching power supplies - Motor control systems - Inverters and converters - Electronic ballasts - Audio amplifiers

Detailed and Complete Alternative Models

Some alternative models to the SIHP25N60EFL-GE3 include: - IRFP460: Similar voltage and current ratings - FDPF33N25: Lower current rating but compatible for certain applications - STP80NF55: Higher current rating and lower on-state resistance

In conclusion, the SIHP25N60EFL-GE3 power MOSFET offers high-performance characteristics suitable for a wide range of power switching applications. Its efficient design, along with its specifications and functional features, makes it a valuable component in electronic systems.

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