SQM60N20-35_GE3

Product Overview

• Category: Power MOSFET
• Use: Power switching applications
• Characteristics: High voltage, low on-resistance, fast switching speed
• Package: TO-247
• Essence: Efficient power management
• Packaging/Quantity: Bulk packaging, quantity varies

Specifications

• Voltage Rating: 200V
• Current Rating: 60A
• On-Resistance: 35mΩ
• Gate-Source Voltage (Max): ±20V
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The SQM60N20-35_GE3 features a standard TO-247 pin configuration with three pins: gate, drain, and source.

Functional Features

• Fast switching speed for improved efficiency
• Low on-resistance for reduced power loss
• High voltage rating for versatile applications

Advantages

• Enhanced power management capabilities
• Suitable for high-power applications
• Reliable and durable design

Disadvantages

• Higher cost compared to lower-rated MOSFETs
• May require additional heat dissipation measures in high-power applications

Working Principles

The SQM60N20-35_GE3 operates based on the principle of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is ideal for use in various power electronics applications, including: - Switch-mode power supplies - Motor control - Inverters - Industrial automation

Detailed and Complete Alternative Models

• IRFP4668PbF
• FDPF51N25T
• STW45NM50FD

In conclusion, the SQM60N20-35_GE3 is a high-performance power MOSFET designed for efficient power switching applications. With its high voltage rating, low on-resistance, and fast switching speed, it offers reliable power management capabilities for a wide range of industrial and commercial applications. While it may have a higher cost and require additional heat dissipation measures in certain scenarios, its advantages in power handling and efficiency make it a preferred choice for demanding power electronics designs.

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